Organic light emitting display device and method of manufacturing the same

ABSTRACT

A organic light emitting display device includes a substrate comprising a light-emitting region and a reflection region, a first sensing electrode which senses a touch position, is disposed in the reflection region, and comprises a material having a first reflectivity and a second sensing electrode which senses a touch position, is disposed in the light-emitting region and the reflection region, and comprises a material having a second reflectivity, and overlapping a portion of the first sensing electrode.

This application claims priority to Korean Patent Application No.10-2015-0147774, filed on Oct. 23, 2015, and all the benefits accruingtherefrom under 35 U.S.C. §119, the content of which in its entirety isherein incorporated by reference.

BACKGROUND

1. Field

Exemplary embodiments of the invention relate to an organic lightemitting display device and a method of manufacturing the organic lightemitting display device. More particularly, exemplary embodiments relateto an organic light emitting display device having a mirror function anda touch function, and a method of manufacturing the organic lightemitting display device.

2. Description of the Related Art

A flat panel display (“FPD”) device is widely used as a display deviceof an electronic device due to its lightweight and thinness compared toa cathode-ray tube (“CRT”) display device. Typical examples of the flatpanel display device include a liquid crystal display (“LCD”) device andan organic light emitting diode (“OLED”) display device. Compared to theLCD, the OLED has many advantages such as a higher luminance and a widerviewing angle. In addition, the OLED display device may be made thinnerthan the LCD because the OLED display device does not require abacklight. In the OLED display device, electrons and holes are injectedinto an organic thin layer through a cathode and an anode, and thenrecombined in the organic thin layer to generate excitons, thereby alight of a certain wavelength is emitted.

Recently, a mirror OLED device reflecting an image of an object (ortarget) that is located in front of the OLED device by including areflective member has been developed. In addition, an OLED device havinga mirror function and a touch function has been developed.

SUMMARY

In order to manufacture an organic light emitting diode (“OLED”) devicehaving a mirror function and a touch function, an additional process forforming an electrode layer having a touch function may be required,which increases a manufacturing cost.

Exemplary embodiments of the invention provide an organic light emittingdisplay device having a mirror function and a touch function.

Exemplary embodiments of the invention also provide a method ofmanufacturing the organic light emitting display device.

In an exemplary embodiment of an organic light emitting display deviceaccording to the invention, the organic light emitting display deviceincludes a substrate comprising a light-emitting region and a reflectionregion, a first sensing electrode which senses a touch position, isdisposed in the reflection region, and comprises a material having afirst reflectivity and a second sensing electrode which senses a touchposition, is disposed in the light-emitting region and the reflectionregion, and comprises a material having a second reflectivity, andoverlapping with a portion of the first sensing electrode.

In an exemplary embodiment, the organic light emitting display devicemay further include an opposite substrate facing the substrate. Thefirst sensing electrode may be disposed on a first surface of theopposite substrate, and the second sensing electrode may be disposed ona second surface opposing the first surface of the opposite substrate.The first sensing electrode may be disposed in the reflection region andan outside of the light-emitting region.

In an exemplary embodiment, the organic light emitting display devicemay further include an opposite substrate facing the substrate. Thefirst sensing electrode may be disposed on the substrate and the secondsensing electrode may be disposed on a first surface of the oppositesubstrate, the second sensing electrode may be disposed between thesubstrate and the opposite substrate.

In an exemplary embodiment, the organic light emitting display devicemay further include an opposite substrate facing the substrate. Thefirst sensing electrode may be disposed on a first surface of theopposite substrate, the first sensing electrode may be disposed betweenthe substrate and the opposite substrate, and the second sensingelectrode may be disposed on the first sensing electrode. The organiclight emitting display device may further include an insulation layerdisposed between the first sensing electrode and the second sensingelectrode, and comprising an adhesive material.

In an exemplary embodiment, the organic light emitting display devicemay further include an opposite substrate facing the substrate. Thesecond sensing electrode may be disposed on a first surface of theopposite substrate, the second sensing electrode may be disposed betweenthe substrate and the opposite substrate, and the first sensingelectrode may be disposed on the second sensing electrode.

In an exemplary embodiment, the organic light emitting display devicemay further include a thin film encapsulation layer disposed on thesubstrate. The second sensing electrode may be disposed on the thin filmencapsulation layer, and the first sensing electrode may be disposed onthe second sensing electrode. The organic light emitting display devicemay further include an insulation layer disposed between the firstsensing electrode and the second sensing electrode, and comprising anadhesive material.

In an exemplary embodiment, the organic light emitting display devicemay further include a first thin film encapsulation layer disposed onthe substrate. The second sensing electrode may be disposed on the firstthin film encapsulation layer, and the first sensing electrode may bedisposed on the second sensing electrode. The organic light emittingdisplay device may further include a second thin film encapsulationlayer disposed between the first sensing electrode and the secondsensing electrode.

In an exemplary embodiment, the first sensing electrode may include aplurality of first patterns extending in a first direction, and thesecond sensing electrode may include a plurality of second patternsextending in a second direction crossing the first direction.

In an exemplary embodiment, the first patterns may include a pluralityof first sensing patterns which sense a touch position and a pluralityof first dummy patterns disposed between the plurality of first sensingpatterns. The plurality of second patterns may include a plurality ofsecond sensing patterns which sense a touch position and a plurality ofsecond dummy patterns disposed between the plurality of second sensingpatterns.

In an exemplary embodiment, the plurality of first sensing patterns mayhave a mesh shape. A width of the plurality of second patterns in thesecond direction may be the same as a width of the first patterns in thefirst direction.

In an exemplary embodiment, the first sensing electrode may include aplurality of plurality of first sensing patterns having a rhombus shapeand sequentially connected each other in a first direction and aplurality of first dummy patterns having a rhombus shape, and disposedbetween the plurality of first sensing patterns, and spaced apart fromeach other. The second sensing electrode may include a plurality ofsecond sensing patterns having a rhombus shape and sequentiallyconnected each other in a second direction crossing the first directionand a plurality of second dummy patterns having a rhombus shape, anddisposed between the plurality of second sensing patterns, and spacedapart from each other.

In an exemplary embodiment of a method of manufacturing an organic lightemitting display device including a substrate comprising alight-emitting region and a reflection region, the method includesforming a first sensing electrode comprising a material having a firstreflectivity on the reflection region and forming a second sensingelectrode comprising a material having a second reflectivity andoverlapping with a portion of the first sensing electrode on thelight-emitting region and the reflection region.

In an exemplary embodiment, forming the first sensing electrode and thesecond sensing electrode may include forming the first sensing electrodeon a first surface of an opposite substrate facing the substrate andforming the second sensing electrode on a second surface opposing thefirst surface of the opposite substrate. The first sensing electrode maybe disposed in the reflection region and an outside of thelight-emitting region.

In an exemplary embodiment, forming the first sensing electrode and thesecond sensing electrode may include forming the first sensing electrodeon the substrate and forming the second sensing electrode on a firstsurface of an opposite substrate facing the substrate. The secondsensing electrode may be disposed between the substrate and the oppositesubstrate.

In an exemplary embodiment, forming the first sensing electrode and thesecond sensing electrode may include forming the first sensing electrodeon a first surface of an opposite substrate facing the substrate, thefirst sensing electrode being disposed between the substrate and theopposite substrate, forming an insulation layer comprising an adhesivematerial on the first sensing electrode and forming the second sensingelectrode on the insulation layer.

In an exemplary embodiment, forming the first sensing electrode and thesecond sensing electrode may include forming the second sensingelectrode on a first surface of an opposite substrate facing thesubstrate, the second sensing electrode being disposed between thesubstrate and the opposite substrate, forming an insulation layercomprising an adhesive material on the second sensing electrode andforming the first sensing electrode on the insulation layer.

In an exemplary embodiment, forming the first sensing electrode and thesecond sensing electrode may include forming a thin film encapsulationlayer on the substrate, forming the second sensing electrode on the thinfilm encapsulation layer, forming an insulation layer on the secondsensing electrode and forming the first sensing electrode on theinsulation layer.

In an exemplary embodiment, forming the first sensing electrode and thesecond sensing electrode may include forming a first thin filmencapsulation layer on the substrate, forming the second sensingelectrode on the first thin film encapsulation layer, forming a secondthin film encapsulation layer comprising the same material as that ofthe first thin film encapsulation layer on the second sensing electrodeand forming the first sensing electrode on the second thin filmencapsulation layer.

In an exemplary embodiment, the first sensing electrode may include aplurality of first patterns extending in a first direction, and thesecond sensing electrode may include a plurality of second patternsextending in a second direction crossing the first direction.

In an exemplary embodiment, the first sensing electrode may include aplurality of first sensing patterns having a rhombus shape andsequentially connected each other in a first direction and a pluralityof first dummy patterns having a rhombus shape, and disposed between theplurality of first sensing patterns, and spaced apart from each other.The second sensing electrode may include a plurality of second sensingpatterns having a rhombus shape and sequentially connected each other ina second direction crossing the first direction and a plurality ofsecond dummy patterns having a rhombus shape, and disposed between theplurality of second sensing patterns, and spaced apart from each other.

According to the illustrated exemplary embodiment, an organic lightemitting display device includes a reflection member having a mirrorfunction and a touch function. Thus, additional process for forming anelectrode layer having a touch function may be omitted. This, amanufacturing cost may be decreased.

In addition, the organic light emitting display device includes a firstreflection member disposed in a reflection region and a second disposedin the light-emitting region and the reflection region. Thus, scatteredreflection occurred at an edge of the first reflection member may bedecreased.

In addition, the organic light emitting display device includes a thinfilm encapsulation layer. Thus, a flexible organic light emittingdisplay device having a mirror function and a touch function may bemanufactured.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the invention will becomemore apparent by describing in detailed exemplary embodiments thereofwith reference to the accompanying drawings, in which:

FIG. 1 is a plan view illustrating an exemplary embodiment of an organiclight emitting display device according to the invention;

FIG. 2 is a cross-sectional view taken along line I-I′ of FIG. 1;

FIGS. 3 to 9 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 2;

FIG. 10 is a plan view illustrating a first sensing electrode of FIG. 2;

FIG. 11 is a plan view illustrating a second sensing electrode of FIG.2;

FIG. 12 is a plan view illustrating the first sensing electrode of FIG.10 and the second sensing electrode of FIG. 11;

FIG. 13 is a plan view illustrating a first sensing electrode of FIG. 2;

FIG. 14 is a plan view illustrating a second sensing electrode of FIG.2;

FIG. 15 is a plan view illustrating the first sensing electrode of FIG.13 and the second sensing electrode of FIG. 14;

FIG. 16 is a plan view illustrating a first sensing electrode of FIG. 2;

FIG. 17 is a plan view illustrating a second sensing electrode of FIG.2;

FIG. 18 is a plan view illustrating the first sensing electrode of FIG.16 and the second sensing electrode of FIG. 17;

FIG. 19 is a plan view illustrating a first sensing electrode of FIG. 2;

FIG. 20 is a plan view magnifying′A′ portion of FIG. 19;

FIG. 21 is a plan view illustrating a second sensing electrode of FIG.2;

FIG. 22 is a plan view magnifying ‘B’ portion of FIG. 21;

FIG. 23 is a plan view illustrating the first sensing electrode of FIG.19 and the second sensing electrode of FIG. 21;

FIG. 24 is a plan view magnifying ‘C’ portion of FIG. 23;

FIG. 25 is a plan view illustrating an exemplary embodiment of anorganic light emitting display device according to the invention;

FIG. 26 is a cross-sectional view taken along line IV-IV′ of FIG. 25;

FIGS. 27 to 33 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 26;

FIG. 34 is a plan view illustrating a first sensing electrode of FIG.26;

FIG. 35 is a plan view illustrating a second sensing electrode of FIG.26;

FIG. 36 is a plan view illustrating the first sensing electrode of FIG.34 and the second sensing electrode of FIG. 35;

FIG. 37 is a plan view illustrating a first sensing electrode of FIG.26;

FIG. 38 is a plan view illustrating a second sensing electrode of FIG.26;

FIG. 39 is a plan view illustrating the first sensing electrode of FIG.37 and the second sensing electrode of FIG. 38;

FIG. 40 is a plan view illustrating a first sensing electrode of FIG.26;

FIG. 41 is a plan view illustrating a second sensing electrode of FIG.26;

FIG. 42 is a plan view illustrating the first sensing electrode of FIG.40 and the second sensing electrode of FIG. 41;

FIG. 43 is a plan view illustrating a first sensing electrode of FIG.26;

FIG. 44 is a plan view magnifying ‘D’ portion of FIG. 43;

FIG. 45 is a plan view illustrating a second sensing electrode of FIG.26;

FIG. 46 is a plan view magnifying ‘E’ portion of FIG. 45;

FIG. 47 is a plan view illustrating the first sensing electrode of FIG.43 and the second sensing electrode of FIG. 45;

FIG. 48 is a plan view magnifying ‘F’ portion of FIG. 47;

FIG. 49 is a plan view illustrating an exemplary embodiment of anorganic light emitting display device according to the invention;

FIG. 50 is a cross-sectional view taken along line V-V′ of FIG. 49;

FIGS. 51 to 58 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 50;

FIG. 59 is a plan view illustrating a first sensing electrode of FIG.50;

FIG. 60 is a plan view illustrating a second sensing electrode of FIG.50;

FIG. 61 is a plan view illustrating the first sensing electrode of FIG.59 and the second sensing electrode of FIG. 60;

FIG. 62 is a plan view illustrating a first sensing electrode of FIG.50;

FIG. 63 is a plan view illustrating a second sensing electrode of FIG.50;

FIG. 64 is a plan view illustrating the first sensing electrode of FIG.62 and the second sensing electrode of FIG. 63;

FIG. 65 is a plan view illustrating a first sensing electrode of FIG.50;

FIG. 66 is a plan view illustrating a second sensing electrode of FIG.50;

FIG. 67 is a plan view illustrating the first sensing electrode of FIG.65 and the second sensing electrode of FIG. 66;

FIG. 68 is a plan view illustrating a first sensing electrode of FIG.50;

FIG. 69 is a plan view magnifying ‘G’ portion of FIG. 68;

FIG. 70 is a plan view illustrating a second sensing electrode of FIG.50;

FIG. 71 is a plan view magnifying ‘H’ portion of FIG. 70;

FIG. 72 is a plan view illustrating the first sensing electrode of FIG.68 and the second sensing electrode of FIG. 70;

FIG. 73 is a plan view magnifying ‘I’ portion of FIG. 72;

FIG. 74 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention;

FIG. 75 is a cross-sectional view taken along line VI-VI′ of FIG. 74;

FIGS. 76 to 83 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 75;

FIG. 84 is a plan view illustrating a first sensing electrode of FIG.75;

FIG. 85 is a plan view illustrating a second sensing electrode of FIG.75;

FIG. 86 is a plan view illustrating the first sensing electrode of FIG.84 and the second sensing electrode of FIG. 85;

FIG. 87 is a plan view illustrating a first sensing electrode of FIG.75;

FIG. 88 is a plan view illustrating a second sensing electrode of FIG.75;

FIG. 89 is a plan view illustrating the first sensing electrode of FIG.87 and the second sensing electrode of FIG. 88;

FIG. 90 is a plan view illustrating a first sensing electrode of FIG.75;

FIG. 91 is a plan view illustrating a second sensing electrode of FIG.75;

FIG. 92 is a plan view illustrating the first sensing electrode of FIG.90 and the second sensing electrode of FIG. 91;

FIG. 93 is a plan view illustrating a first sensing electrode of FIG.75;

FIG. 94 is a plan view magnifying ‘J’ portion of FIG. 93;

FIG. 95 is a plan view illustrating a second sensing electrode of FIG.75;

FIG. 96 is a plan view magnifying ‘K’ portion of FIG. 95;

FIG. 97 is a plan view illustrating the first sensing electrode of FIG.93 and the second sensing electrode of FIG. 95;

FIG. 98 is a plan view magnifying ‘L’ portion of FIG. 97;

FIG. 99 is a plan view illustrating an exemplary embodiment of anorganic light emitting display device according to the invention;

FIG. 100 is a cross-sectional view taken along line VII-VII′ of FIG. 99;

FIGS. 101 to 108 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 100;

FIG. 109 is a plan view illustrating a first sensing electrode of FIG.100;

FIG. 110 is a plan view illustrating a second sensing electrode of FIG.100;

FIG. 111 is a plan view illustrating the first sensing electrode of FIG.109 and the second sensing electrode of FIG. 110;

FIG. 112 is a plan view illustrating a first sensing electrode of FIG.100;

FIG. 113 is a plan view illustrating a second sensing electrode of FIG.100;

FIG. 114 is a plan view illustrating the first sensing electrode of FIG.112 and the second sensing electrode of FIG. 113;

FIG. 115 is a plan view illustrating a first sensing electrode of FIG.100;

FIG. 116 is a plan view illustrating a second sensing electrode of FIG.100;

FIG. 117 is a plan view illustrating the first sensing electrode of FIG.115 and the second sensing electrode of FIG. 116;

FIG. 118 is a plan view illustrating a first sensing electrode of FIG.100;

FIG. 119 is a plan view magnifying ‘M’ portion of FIG. 118;

FIG. 120 is a plan view illustrating a second sensing electrode of FIG.100;

FIG. 121 is a plan view magnifying ‘N’ portion of FIG. 120;

FIG. 122 is a plan view illustrating the first sensing electrode of FIG.118 and the second sensing electrode of FIG. 120;

FIG. 123 is a plan view magnifying ‘O’ portion of FIG. 122;

FIG. 124 is a plan view illustrating an exemplary embodiment of anorganic light emitting display device according to the invention;

FIG. 125 is a cross-sectional view taken along line VIII-VIII′ of FIG.124;

FIGS. 126 to 133 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 125;

FIG. 134 is a plan view illustrating a first sensing electrode of FIG.125;

FIG. 135 is a plan view illustrating a second sensing electrode of FIG.125;

FIG. 136 is a plan view illustrating the first sensing electrode of FIG.134 and the second sensing electrode of FIG. 135;

FIG. 137 is a plan view illustrating a first sensing electrode of FIG.125;

FIG. 138 is a plan view illustrating a second sensing electrode of FIG.125;

FIG. 139 is a plan view illustrating the first sensing electrode of FIG.137 and the second sensing electrode of FIG. 138;

FIG. 140 is a plan view illustrating a first sensing electrode of FIG.125;

FIG. 141 is a plan view illustrating a second sensing electrode of FIG.125;

FIG. 142 is a plan view illustrating the first sensing electrode of FIG.140 and the second sensing electrode of FIG. 141;

FIG. 143 is a plan view illustrating a first sensing electrode of FIG.125;

FIG. 144 is a plan view magnifying ‘P’ portion of FIG. 143;

FIG. 145 is a plan view illustrating a second sensing electrode of FIG.125;

FIG. 146 is a plan view magnifying ‘Q’ portion of FIG. 145;

FIG. 147 is a plan view illustrating the first sensing electrode of FIG.143 and the second sensing electrode of FIG. 145; and

FIG. 148 is a plan view magnifying ‘R’ portion of FIG. 147.

DETAILED DESCRIPTION

Hereinafter, the invention will be explained in detail with reference tothe accompanying drawings. This invention may, however, be embodied inmany different forms, and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this invention will be thorough and complete, and will fully conveythe scope of the invention to those skilled in the art. Like referencenumerals refer to like elements throughout.

It will be understood that when an element is referred to as being “on”another element, it can be directly on the other element or interveningelements may be therebetween. In contrast, when an element is referredto as being “directly on” another element, there are no interveningelements present.

It will be understood that, although the terms “first,” “second,”“third” etc. may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, “a first element,” “component,” “region,” “layer” or“section” discussed below could be termed a second element, component,region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an,” and “the” are intended to include the pluralforms, including “at least one,” unless the content clearly indicatesotherwise. “Or” means “and/or.” As used herein, the term “and/or”includes any and all combinations of one or more of the associatedlisted items. It will be further understood that the terms “comprises”and/or “comprising,” or “includes” and/or “including” when used in thisspecification, specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

Furthermore, relative terms, such as “lower” or “bottom” and “upper” or“top,” may be used herein to describe one element's relationship toanother element as illustrated in the Figures. It will be understoodthat relative terms are intended to encompass different orientations ofthe device in addition to the orientation depicted in the Figures. In anexemplary embodiment, when the device in one of the figures is turnedover, elements described as being on the “lower” side of other elementswould then be oriented on “upper” sides of the other elements. Theexemplary term “lower,” can therefore, encompasses both an orientationof “lower” and “upper,” depending on the particular orientation of thefigure. Similarly, when the device in one of the figures is turned over,elements described as “below” or “beneath” other elements would then beoriented “above” the other elements. The exemplary terms “below” or“beneath” can, therefore, encompass both an orientation of above andbelow.

“About” or “approximately” as used herein is inclusive of the statedvalue and means within an acceptable range of deviation for theparticular value as determined by one of ordinary skill in the art,considering the measurement in question and the error associated withmeasurement of the particular quantity (i.e., the limitations of themeasurement system). For example, “about” can mean within one or morestandard deviations, or within ±30%, 20%, 10%, 5% of the stated value.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and theinvention, and will not be interpreted in an idealized or overly formalsense unless expressly so defined herein.

Exemplary embodiments are described herein with reference to crosssection illustrations that are schematic illustrations of idealizedembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments described herein should not beconstrued as limited to the particular shapes of regions as illustratedherein but are to include deviations in shapes that result, for example,from manufacturing. In an exemplary embodiment, a region illustrated ordescribed as flat may, typically, have rough and/or nonlinear features.Moreover, sharp angles that are illustrated may be rounded. Thus, theregions illustrated in the figures are schematic in nature and theirshapes are not intended to illustrate the precise shape of a region andare not intended to limit the scope of the claims.

FIG. 1 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention. FIG. 2 isa cross-sectional view taken along line I-I′ of FIG. 1.

Referring to FIGS. 1 and 2, an organic light emitting display deviceaccording to an exemplary embodiment of the invention may include alight-emitting region II and a reflection region III. Pixels 60, 70, and80 may be positioned in the light-emitting region II, and a transparentwindow may be positioned in the reflection region III. In an exemplaryembodiment, the pixel 60 may be a pixel emitting a red color, the pixel70 may be a pixel emitting a green color, and the pixel 80 may be apixel emitting a blue color, for example.

A reflection member may be disposed in the light-emitting region II andthe reflection region III. The reflection member may include a firstreflection member disposed in the reflection region III and a secondreflection member disposed in the light-emitting region II and thereflection region III. The first reflection member may overlap a portionof the pixels 60, 70, and 80. The first reflection member is disposedoutside of the pixels 60, 70, and 80, and thus the first reflectionmember may overlap a portion of the pixels 60, 70, and 80. The firstreflection member may have different reflectivity from the secondreflection member. When the reflection member includes only the firstreflection member, scattered reflection may be occurred at an edge ofthe first reflection member. However, an organic light emitting displaydevice according to an exemplary embodiment of the invention includesthe second reflection member disposed in the light-emitting region IIand the reflection region III. Thus, scattered reflection occurred at anedge of the first reflection member may be decreased.

The first reflection member according to an exemplary embodiment of theinvention may be a first sensing electrode 370 including a materialhaving a predetermined reflectivity. In addition, the second reflectionmember according to an exemplary embodiment of the invention may be asecond sensing electrode 390 including a material which has apredetermined reflectivity and sensing a touch position. The firstsensing electrode 370 may overlap the second sensing electrode 390.

The first sensing electrode 370 and second sensing electrode 390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 370 and second sensing electrode 390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 370 may have a different thickness from athickness of the second sensing electrode 390. In an exemplaryembodiment, a thickness of the first sensing electrode 370 measuredalong a cross-sectional direction may be about 1000 angstroms (Å), forexample. When the thickness of the first sensing electrode 370 is about1000 Å, transmissivity of the first sensing electrode 370 may be about 0percent (%), and reflexibility of the first sensing electrode 370 may begreater than about 95%. In addition, a thickness of the second sensingelectrode 390 measured along a cross-sectional direction may be about100 Å. When the thickness of the second sensing electrode 390 is about100 Å, transmissivity of the second sensing electrode 390 may be greaterthan about 50% and less than about 95%. When an organic light emittingdisplay device emits light, the light is emitted through the secondelectrode 390 in the light-emitting region II, and when an organic lightemitting display device does not emits light, the second sensingelectrode 390 may perform a mirror function.

An organic light emitting display device according to an exemplaryembodiment of the invention includes a first substrate 110, a bufferlayer 115, a first insulation interlayer 150, a second insulation layer190, a third insulation layer 270, a light emitting structure, a pixeldefining layer 310, a first sensing electrode 370, a second sensingelectrode 390 and a second substrate 350. Here, the light emittingstructure includes a semiconductor element 250, a first electrode 290,an emission layer 330 and a second electrode 340. The semiconductorelement 250 includes an active pattern 130, a gate electrode 170, asource electrode 210 and a drain electrode 230. An opening 380 isdefined in the first sensing electrode 370.

The organic light emitting display device 100 may include a plurality ofpixel regions Px (refer to FIG. 12). One pixel region may include thelight-emitting region II and the reflection region III. The reflectionregion III may substantially surround the light-emitting region II. Thesemiconductor element 250, the first electrode 290, the emission layer330 and a portion of the second electrode 340 may be disposed in thelight-emitting region II. However, the invention is not limited thereto,and the semiconductor element 250 may be disposed in the reflectionregion III. In addition, the first sensing electrode 370 may be disposedin the reflection region III and outside of the light-emitting regionII, and the second sensing electrode 390 may be disposed in thelight-emitting region II and the reflection region III.

A display image may be displayed in light-emitting region II. An imageof an object that is located in front of the organic light emittingdisplay device 100 may be reflected in the reflection region III.

The light emitting structure may be disposed on the first substrate 110.The first substrate 110 may include transparent materials. In anexemplary embodiment, the first substrate 110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 250, a capacitor, the first electrode 290, thelight emitting layer 330, the second electrode 340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 100 includes the light-emitting region II and thereflection region III, the first substrate 110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 115 may be disposed on the first substrate 110. Thebuffer layer 115 may extend from the light-emitting region II into thereflection region III. The buffer layer 115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 110. Additionally, the buffer layer 115 may control a rate ofa heat transfer in a crystallization process for forming the activepattern 130, thereby obtaining substantially uniform the active pattern130. Furthermore, the buffer layer 115 may improve a surface flatness ofthe first substrate 110 when a surface of the first substrate 110 isrelatively irregular. According to a type of the first substrate 110, atleast two buffer layers may be provided on the first substrate 110, orthe buffer layer may not be disposed.

The semiconductor element 250 may include the active pattern 130, thegate electrode 170, the source electrode 210, and the drain electrode230. In an exemplary embodiment, the active pattern 130 may be disposedon the first substrate 110, for example. In an exemplary embodiment, theactive pattern 130 may be disposed an oxide semiconductor, an inorganicsemiconductor (e.g., amorphous silicon, polysilicon, etc.), an organicsemiconductor, etc., for example.

The first insulation layer 150 may be disposed on the active pattern130. The first insulation layer 150 may cover the active pattern 130 inthe light-emitting region II, and may extend in the first direction onthe first substrate 110. That is, the first insulation layer 150 may bedisposed on the entire surface of the first substrate 110. In anexemplary embodiment, the first insulation layer 150 may include asilicon compound, a metal oxide, etc., for example.

The gate electrode 170 may be disposed on a portion of the firstinsulation layer 150 under which the active pattern 130 is disposed. Inan exemplary embodiment, the gate electrode 170 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 190 may be disposed on the gate electrode170. The second insulation layer 190 may cover the gate electrode 170 inthe light-emitting region II, and may extend in the first direction onthe first substrate 110. That is, the second insulation layer 190 may bedisposed on the entire surface of the first substrate 110. In anexemplary embodiment, the second insulation layer 190 may include asilicon compound, a metal oxide, etc., for example.

The source electrode 210 and the drain electrode 230 may be disposed onthe second insulation layer 190. The source electrode 210 may be incontact with a first side of the active pattern 130 by removing aportion of the first and second insulation layers 150 and 190. The drainelectrode 230 may be in contact with a second side of the active pattern130 by removing a second portion of the first and second insulationlayers 150 and 190. In an exemplary embodiment, each of the sourceelectrode 210 and the drain electrode 230 may include a metal, an alloy,metal nitride, conductive metal oxide, transparent conductive materials,etc., for example.

The third insulation layer 270 may be disposed on the source electrode210 and the drain electrode 230. The third insulation layer 270 maycover the source electrode 210 and the drain electrode 230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 110. That is, the third insulation layer 270 may be disposedon the entire surface of the first substrate 110. In an exemplaryembodiment, the third insulation layer 270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 290 may be disposed on the third insulation layer270. The first electrode 290 may be in contact with the source electrode210 by removing a portion of the third insulation layer 270. Inaddition, the first electrode 290 may be electrically connected to thesemiconductor element 250. In an exemplary embodiment, the firstelectrode 290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

In the illustrated exemplary embodiment, the gate electrode 170 isdisposed on the active pattern 130. However, the invention is notlimited thereto, and the gate electrode 170 may be disposed under theactive pattern 130.

The pixel defining layer 310 may be disposed the on third insulationlayer 270 to expose a portion of the first electrode 290. The pixeldefining layer 310 may include organic materials or inorganic materials.In this case, the light emitting layer 330 may be disposed on a portionthat the first electrode 290 is exposed by the pixel defining layer 310.

The light emitting layer 330 may be disposed on the exposed firstelectrode 290. The light emitting layer 330 may be provided using lightemitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 340 may be disposed on the pixel defining layer 310and the light emitting layer 330. The second electrode 340 may cover thepixel defining layer 310 and the light emitting layer 330 in thelight-emitting region II and the reflection region III, and may extendin the first direction on the first substrate 110. That is, the secondelectrode 340 may be electrically connected to the first through thirdpixels. In an exemplary embodiment, the second electrode 340 may includea metal, an alloy, metal nitride, conductive metal oxide, a transparentconductive material, etc., for example. These may be used alone or in acombination thereof. The first substrate 110 may be combined with thesecond substrate 350 by using a sealing member. In addition, a fillermay be disposed between the first substrate 110 and the second substrate350.

The first sensing electrode 370 may be disposed on a first surface ofthe second substrate 350. A first surface of the first sensing electrode370 may face the second electrode 340, and a second surface opposing thefirst surface of the first sensing electrode 370 may contact with thesecond substrate 350. However, the invention is not limited thereto, andan insulation layer may be disposed between the second substrate 350 andthe first sensing electrode 370.

The first sensing electrode 370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 370 may include gold (Au), silver (Ag), aluminum (Al),magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc., forexample. In an alternative exemplary embodiment, the first sensingelectrode 370 may include an alloy, metal nitride, conductive metaloxide, etc., for example. In an exemplary embodiment, the first sensingelectrode 370 may include an alloy including aluminum, aluminum nitride(AlNx), an alloy including silver, tungsten nitride (WNx), an alloyincluding copper, chrome nitride (CrNx), an alloy including molybdenum,titanium nitride (TiNx), tantalum nitride (TaNx), strontium rutheniumoxide (“SRO”), zinc oxide (ZnOx), stannum oxide (SnOx), indium oxide(InOx), gallium oxide (GaOx), etc., for example.

The second substrate 350 and the first substrate 110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc., forexample. In exemplary embodiments, the second substrate 350 may includea transparent inorganic material or flexible plastic. In an exemplaryembodiment, the second substrate 350 may include a flexible transparentresin substrate, for example. In this case, to increase flexibility ofthe organic light emitting display device 100, the second substrate 350may include a stacked structure where at least one organic layer and atleast one inorganic layer are alternately stacked.

The second sensing electrode 390 may be disposed on a second surfaceopposing the first surface of the second substrate 350. The secondsensing electrode 390 may be disposed in the light-emitting region IIand the reflection region III. However, the invention is not limitedthereto, and an insulation layer may be disposed between secondsubstrate 350 and the second sensing electrode 390.

The second sensing electrode 390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 390 may include gold (Au), silver (Ag), aluminum (Al),magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc., forexample. In an alternative exemplary embodiment, the second sensingelectrode 390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode 390may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

A fifth insulation layer 395 may be disposed on the second sensingelectrode 390. In an exemplary embodiment, the fifth insulation layer395 may include a silicon compound, a metal oxide, etc., for example.

In the illustrated exemplary embodiment, the first sensing electrode 370may be disposed on a first surface of the second substrate 350 and thesecond sensing electrode 390 may be disposed on a second surfaceopposing the first surface of the second substrate 350. However, theinvention is not limited thereto, and the first sensing electrode 370may be disposed on the second surface of the second substrate 350 andthe second sensing electrode 390 may be disposed on the first surface ofthe second substrate 350.

FIGS. 3 to 9 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 2.

Referring to FIG. 3, the buffer layer 115 is disposed on the firstsubstrate 110. Thereafter, the active pattern 130 and the firstinsulation layer 150 are disposed on the buffer layer 115.

In an exemplary embodiment, the first substrate 110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example.

The light emitting structure may be disposed on the first substrate 110.The first substrate 110 may include transparent materials. In anexemplary embodiment, the first substrate 110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 250, a capacitor, the first electrode 290, thelight emitting layer 330, the second electrode 340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 100 includes the light-emitting region II and thereflection region III, the first substrate 110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 115 may be disposed on the first substrate 110. Thebuffer layer 115 may extend from the light-emitting region II into thereflection region III. The buffer layer 115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 110. Additionally, the buffer layer 115 may control a rate ofa heat transfer in a crystallization process for forming the activepattern 130, thereby obtaining substantially uniform the active pattern130. Furthermore, the buffer layer 115 may improve a surface flatness ofthe first substrate 110 when a surface of the first substrate 110 isrelatively irregular. According to a type of the first substrate 110, atleast two buffer layers may be provided on the first substrate 110, orthe buffer layer may not be disposed.

In an exemplary embodiment, the active pattern 130 may include an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon,polysilicon, etc.), an organic semiconductor, etc., for example.

The first insulation layer 150 may be disposed on the active pattern130. The first insulation layer 150 may cover the active pattern 130 inthe light-emitting region II, and may extend in the first direction onthe first substrate 110. That is, the first insulation layer 150 may bedisposed on the entire surface of the first substrate 110. In anexemplary embodiment, the first insulation layer 150 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 4, the gate electrode 170 and the second insulationlayer 190 are disposed on the first substrate 110 on which the firstinsulation layer 150 is disposed.

The gate electrode 170 may be disposed on a portion of the firstinsulation layer 150 under which the active pattern 130 is disposed. Inan exemplary embodiment, the gate electrode 170 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 190 may be disposed on the gate electrode170. The second insulation layer 190 may cover the gate electrode 170 inthe light-emitting region II, and may extend in the first direction onthe first substrate 110. That is, the second insulation layer 190 may bedisposed on the entire surface of the first substrate 110. In anexemplary embodiment, the second insulation layer 190 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 5, the source electrode 210 and the drain electrode230 are disposed on the first substrate 110 on which the secondinsulation layer 190 is disposed.

The source electrode 210 and the drain electrode 230 may be disposed onthe second insulation layer 190. The source electrode 210 may be incontact with a first side of the active layer 130 by removing a portionof the first and second insulation layers 150 and 190. The drainelectrode 230 may be in contact with a second side of the active layer130 by removing a second portion of the first and second insulationlayers 150 and 190. In an exemplary embodiment, each of the sourceelectrode 210 and the drain electrode 230 may include a metal, an alloy,metal nitride, conductive metal oxide, transparent conductive materials,etc., for example.

In the illustrated exemplary embodiment, the gate electrode 170 isdisposed on the active pattern 130. However, the invention is notlimited thereto, and the gate electrode 170 may be disposed under theactive pattern 130.

Referring to FIG. 6, the third insulation layer 270 and the firstelectrode 290 are disposed on the first substrate 110 on which thesource electrode 210 and the drain electrode 230 are disposed.

The third insulation layer 270 may be disposed on the source electrode210 and the drain electrode 230. The third insulation layer 270 maycover the source electrode 210 and the drain electrode 230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 110. That is, the third insulation layer 270 may be disposedon the entire surface of the first substrate 110. In an exemplaryembodiment, the third insulation layer 270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 290 may be disposed on the third insulation layer270. The first electrode 290 may be in contact with the source electrode210 by removing a portion of the third insulation layer 270. Inaddition, the first electrode 290 may be electrically connected to thesemiconductor element 250. In an exemplary embodiment, the firstelectrode 290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

Referring to FIG. 7, the pixel defining layer 310, the light emittinglayer 330 and the second electrode 340 are disposed on the firstsubstrate 110 on which the first electrode 290 is disposed.

The pixel defining layer 310 may be disposed the on third insulationlayer 270 to expose a portion of the first electrode 290. The pixeldefining layer 310 may include organic materials or inorganic materials.In this case, the light emitting layer 330 may be disposed on a portionthat the first electrode 290 is exposed by the pixel defining layer 310.

The light emitting layer 330 may be disposed on the exposed firstelectrode 290. The light emitting layer 330 may be provided using lightemitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 340 may be disposed on the pixel defining layer 310and the light emitting layer 330. The second electrode 340 may cover thepixel defining layer 310 and the light emitting layer 330 in thelight-emitting region II and the reflection region III, and may extendin the first direction on the first substrate 110. That is, the secondelectrode 340 may be electrically connected to the first through thirdpixels. In an exemplary embodiment, the second electrode 340 may includea metal, an alloy, metal nitride, conductive metal oxide, a transparentconductive material, etc., for example. These may be used alone or in acombination thereof. The first substrate 110 may be combined with thesecond substrate 350 by using a sealing member. In addition, a fillermay be disposed between the first substrate 110 and the second substrate350.

Referring to FIG. 8, the first sensing electrode 370 is disposed on thesecond substrate 350.

The first sensing electrode 370 may be disposed on a first surface ofthe second substrate 350. A first surface of the first sensing electrode370 may face the second electrode 340, and a second surface opposing thefirst surface of the first sensing electrode 370 may contact with thesecond substrate 350.

The first sensing electrode 370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 370 may include gold (Au), silver (Ag), aluminum (Al),magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc., forexample. In an alternative exemplary embodiment, the first sensingelectrode 370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The second substrate 350 and the first substrate 110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc. Inexemplary embodiments, the second substrate 350 may include atransparent inorganic material or flexible plastic. In an exemplaryembodiment, the second substrate 350 may include a flexible transparentresin substrate. In this case, to increase flexibility of the organiclight emitting display device 100, the second substrate 350 may includea stacked structure where at least one organic layer and at least oneinorganic layer are alternately stacked.

Referring to FIG. 9, the second sensing electrode 390 is disposed on asecond surface opposing the first surface of the second substrate 350. Afifth insulation layer 395 is disposed on the second sensing electrode390.

The second sensing electrode 390 may be disposed on a second surfaceopposing the first surface of the second substrate 350. The secondsensing electrode 390 may be disposed in the light-emitting region IIand the reflection region III. However, the invention is not limitedthereto, and an insulation layer may be disposed between secondsubstrate 350 and the second sensing electrode 390.

The second sensing electrode 390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 390 may include gold (Au), silver (Ag), aluminum (Al),magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc., forexample. In an alternative exemplary embodiment, the second sensingelectrode 390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode 390may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

FIG. 10 is a plan view illustrating a first sensing electrode of FIG. 2.FIG. 11 is a plan view illustrating a second sensing electrode of FIG.2. FIG. 12 is a plan view illustrating the first sensing electrode ofFIG. 10 and the second sensing electrode of FIG. 11.

Referring to FIGS. 2 and 10 to 12, a first sensing electrode 370 and asecond sensing electrode 390 are illustrated.

The first sensing electrode 370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode370 is disposed in the reflection region III. The first sensingelectrode 370 may be connected to a sensing driving part through a firstconnecting line 375. The first connecting line 375 may include the samematerial as that of the first sensing electrode 370. The firstconnecting line 375 may be disposed on the same layer as that on whichthe first sensing electrode 370 is disposed.

The second sensing electrode 390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. The second sensing electrode 390 is disposed in the light-emittingregion II and the reflection region III. The second sensing electrode390 may be connected to a sensing driving part through a secondconnecting line 395. The second connecting line 395 may include the samematerial as that of the second sensing electrode 390. The secondconnecting line 395 may be disposed on the same layer as that on whichthe second sensing electrode 390 is disposed.

The first sensing electrode 370 may include a material having apredetermined reflectivity. The second sensing electrode 390 may includea material having a predetermined reflectivity. The first sensingelectrode 370 may partially overlap the second sensing electrode 390.

The first sensing electrode 370 may be disposed on a first surface ofthe second substrate 350. The second sensing electrode 390 may bedisposed on a second surface opposing the first surface of the secondsubstrate 350.

The first sensing electrode 370 and second sensing electrode 390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 370 and second sensing electrode 390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 370 may have a different thickness from athickness of the second sensing electrode 390. In an exemplaryembodiment, a thickness of the first sensing electrode 370 may be about1000 Å, for example. When the thickness of the first sensing electrode370 is about 1000 Å, transmissivity of the first sensing electrode 370may be about 0%, and reflexibility of the first sensing electrode 370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 390 may be about 100 Å. When the thickness of thesecond sensing electrode 390 is about 100 Å, transmissivity of thesecond sensing electrode 390 may be greater than about 50% and less thanabout 95%. When an organic light emitting display device emits light,the light is emitted through the second electrode 390 in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 390 mayperform a mirror function.

FIG. 13 is a plan view illustrating a first sensing electrode of FIG. 2.FIG. 14 is a plan view illustrating a second sensing electrode of FIG.2. FIG. 15 is a plan view illustrating the first sensing electrode ofFIG. 13 and the second sensing electrode of FIG. 14.

Referring to FIGS. 2 and 13 to 15, a first sensing electrode 370 and asecond sensing electrode 390 are illustrated.

The first sensing electrode 370 may include a plurality of first sensingpatterns 371 extending in a second direction D2 and a plurality of firstdummy patterns 373 disposed between the first sensing patterns 371. Thefirst sensing electrode 370 is disposed in the reflection region III. Aninterval of the first sensing patterns 371 may be adjusted according tothe number of the first dummy patterns 373. The first sensing electrode370 may be connected to a sensing driving part through a firstconnecting line 375. The first connecting line 375 may include the samematerial as that of the first sensing electrode 370. The firstconnecting line 375 may be disposed on the same layer as that on whichthe first sensing electrode 370 is disposed.

The second sensing electrode 390 may be provided as a plurality ofsecond sensing patterns 391 extending in a first direction D1 crossingthe second direction D2 and a plurality of second dummy patterns 393disposed between the second sensing patterns 391. The second sensingelectrode 390 is disposed in the light-emitting region II and thereflection region III. An interval of the second sensing electrode 390may be adjusted according to the number of the second dummy patterns393. The second sensing electrode 390 may be connected to a sensingdriving part through a second connecting line 395. The second connectingline 395 may include the same material as that of the second sensingelectrode 390. The second connecting line 395 may be disposed on thesame layer as that on which the second sensing electrode 390 isdisposed.

The first sensing electrode 370 may include a material having apredetermined reflectivity. The second sensing electrode 390 may includea material having a predetermined reflectivity. The first sensingelectrode 370 may partially overlap the second sensing electrode 390.

The first sensing electrode 370 may be disposed on a first surface ofthe second substrate 350. The second sensing electrode 390 may bedisposed on a second surface opposing the first surface of the secondsubstrate 350.

The first sensing electrode 370 may have a different thickness from athickness of the second sensing electrode 390. In an exemplaryembodiment, a thickness of the first sensing electrode 370 may be about1000 Å, for example. When the thickness of the first sensing electrode370 is about 1000 Å, transmissivity of the first sensing electrode 370may be about 0%, and reflexibility of the first sensing electrode 370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 390 may be about 100 Å. When the thickness of thesecond sensing electrode 390 is about 100 Å, transmissivity of thesecond sensing electrode 390 may be greater than about 50% and less thanabout 95%. When an organic light emitting display device emits light,the light is emitted through the second electrode 390 in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 390 mayperform a mirror function.

The first sensing electrode 370 and second sensing electrode 390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 370 and second sensing electrode 390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

FIG. 16 is a plan view illustrating a first sensing electrode of FIG. 2.FIG. 17 is a plan view illustrating a second sensing electrode of FIG.2. FIG. 18 is a plan view illustrating the first sensing electrode ofFIG. 16 and the second sensing electrode of FIG. 17.

Referring to FIGS. 2 and 16 to 18, a first sensing electrode 370 and asecond sensing electrode 390 are illustrated.

The first sensing electrode 370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode370 may be provided as a mesh shape. The first sensing electrode 370 isdisposed in the reflection region III. The first sensing electrode 370may be connected to a sensing driving part through a first connectingline 375. The first connecting line 375 may include the same material asthat of the first sensing electrode 370. The first connecting line 375may be disposed on the same layer as that on which the first sensingelectrode 370 is disposed.

The second sensing electrode 390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. A width of the second sensing electrode 390 in the second directionD2 is the same as a width of the first sensing electrode 370 in thefirst direction D1. The second sensing electrode 390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 390 may be connected to a sensing driving part througha second connecting line 395. The second connecting line 395 may includethe same material as that of the second sensing electrode 390. Thesecond connecting line 395 may be disposed on the same layer as that onwhich the second sensing electrode 390 is disposed.

The first sensing electrode 370 may include a material having apredetermined reflectivity. The second sensing electrode 390 may includea material having a predetermined reflectivity. The first sensingelectrode 370 may partially overlap the second sensing electrode 390.

The first sensing electrode 370 may be disposed on a first surface ofthe second substrate 350. The second sensing electrode 390 may bedisposed on a second surface opposing the first surface of the secondsubstrate 350.

The first sensing electrode 370 and second sensing electrode 390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 370 and second sensing electrode 390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 370 may have a different thickness from athickness of the second sensing electrode 390. In an exemplaryembodiment, a thickness of the first sensing electrode 370 may be about1000 Å, for example. When the thickness of the first sensing electrode370 is about 1000 Å, transmissivity of the first sensing electrode 370may be about 0%, and reflexibility of the first sensing electrode 370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 390 may be about 100 Å. When the thickness of thesecond sensing electrode 390 is about 100 Å, transmissivity of thesecond sensing electrode 390 may be greater than about 50% and less thanabout 95%. When an organic light emitting display device emits light,the light is emitted through the second electrode 390 in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 390 mayperform a mirror function.

FIG. 19 is a plan view illustrating a first sensing electrode of FIG. 2.FIG. 20 is a plan view magnifying ‘A’ portion of FIG. 19. FIG. 21 is aplan view illustrating a second sensing electrode of FIG. 2. FIG. 22 isa plan view magnifying ‘B’ portion of FIG. 21. FIG. 23 is a plan viewillustrating the first sensing electrode of FIG. 19 and the secondsensing electrode of FIG. 21. FIG. 24 is a plan view magnifying ‘C’portion of FIG. 23.

Referring to FIGS. 2 and 19 to 24, a first sensing electrode 370 and asecond sensing electrode 390 are illustrated.

The first sensing electrode 370 may include plurality of first sensingpatterns 371 having a rhombus shape and sequentially connected eachother in a first direction D1 and a plurality of first dummy patterns373 having a rhombus shape and disposed between the first sensingpatterns 371. The first dummy patterns 373 are spaced apart from eachother. The first sensing electrode 370 is disposed in the reflectionregion III. The first sensing electrode 370 may be connected to asensing driving part through a first connecting line 375. The firstconnecting line 375 may include the same material as that of the firstsensing electrode 370. The first connecting line 375 may be disposed onthe same layer as that on which the first sensing electrode 370 isdisposed.

The second sensing electrode 390 may include plurality of second sensingpatterns 391 having a rhombus shape and sequentially connected eachother in a second direction D2 and a plurality of second dummy patterns393 having a rhombus shape and disposed between the second sensingpatterns 391. The second dummy patterns 393 are spaced apart from eachother. The second sensing electrode 390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 390 may be connected to a sensing driving part througha second connecting line 395. The second connecting line 395 may includethe same material as that of the second sensing electrode 390. Thesecond connecting line 395 may be disposed on the same layer as that onwhich the second sensing electrode 390 is disposed.

The first sensing electrode 370 may include a material having apredetermined reflectivity. The second sensing electrode 390 may includea material having a predetermined reflectivity. The first sensingelectrode 370 may partially overlap the second sensing electrode 390.

The first sensing electrode 370 may be disposed on a first surface ofthe second substrate 350. The second sensing electrode 390 may bedisposed on a second surface opposing the first surface of the secondsubstrate 350.

The first sensing electrode 370 and second sensing electrode 390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 370 and second sensing electrode 390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 370 may have a different thickness from athickness of the second sensing electrode 390. In an exemplaryembodiment, a thickness of the first sensing electrode 370 may be about1000 Å, for example. When the thickness of the first sensing electrode370 is about 1000 Å, transmissivity of the first sensing electrode 370may be about 0%, and reflexibility of the first sensing electrode 370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 390 may be about 100 Å. When the thickness of thesecond sensing electrode 390 is about 100 Å, transmissivity of thesecond sensing electrode 390 may be greater than about 50% and less thanabout 95%. When an organic light emitting display device emits light,the light is emitted through the second electrode 390 in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 390 mayperform a mirror function.

FIG. 25 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention. FIG. 26 isa cross-sectional view taken along line IV-IV′ of FIG. 25.

An organic light emitting display device according to the illustratedexemplary embodiment is substantially same as the organic light emittingdisplay device of FIGS. 1 and 2 except for a first sensing electrode1370 and a second sensing electrode 1390 and thus similar referencenumerals are used for same elements and repetitive explanation will beomitted.

Referring to FIGS. 25 and 26, the first sensing electrode 1370 isdisposed on a second electrode 1340. The first sensing electrode 1370 isdisposed on a first substrate 1110. The first sensing electrode 1370 maybe disposed in the reflection region III and outside of thelight-emitting region II.

The first sensing electrode 1370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 1370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 1370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 1370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The second substrate 1350 and the first substrate 1110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 1350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc., forexample. In exemplary embodiments, the second substrate 1350 may includea transparent inorganic material or flexible plastic. In an exemplaryembodiment, the second substrate 1350 may include a flexible transparentresin substrate, for example. In this case, to increase flexibility ofthe organic light emitting display device 1100, the second substrate1350 may include a stacked structure where at least one organic layerand at least one inorganic layer are alternately stacked.

The second sensing electrode 1390 may be disposed on the secondsubstrate 1350. The second sensing electrode 1390 may be disposed in thelight-emitting region II and the reflection region III. However, theinvention is not limited thereto, and an insulation layer may bedisposed between second substrate 1350 and the second sensing electrode1390.

The second sensing electrode 1390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 1390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 1390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode1390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The first sensing electrode 1370 may have a different thickness from athickness of the second sensing electrode 1390. In an exemplaryembodiment, a thickness of the first sensing electrode 1370 may be about1000 Å, for example. When the thickness of the first sensing electrode1370 is about 1000 Å, transmissivity of the first sensing electrode 1370may be about 0%, and reflexibility of the first sensing electrode 1370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 1390 may be about 100 Å. When the thickness of thesecond sensing electrode 1390 is about 100 Å, transmissivity of thesecond sensing electrode 1390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 1390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 1390 mayperform a mirror function.

FIGS. 27 to 33 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 26.

Referring to FIG. 27, the buffer layer 1115 is disposed on the firstsubstrate 1110. Thereafter, the active pattern 1130 and the firstinsulation layer 1150 are disposed on the buffer layer 1115.

In an exemplary embodiment, the first substrate 1110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example.

The light emitting structure may be disposed on the first substrate1110. The first substrate 1110 may include transparent materials. In anexemplary embodiment, the first substrate 1110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 1110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 1110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 1110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 1250, a capacitor, the first electrode 1290, thelight emitting layer 1330, the second electrode 1340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 1110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 1100 includes the light-emitting region II and thereflection region III, the first substrate 1110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 1115 may be disposed on the first substrate 1110. Thebuffer layer 1115 may extend from the light-emitting region II into thereflection region III. The buffer layer 1115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 1110. Additionally, the buffer layer 1115 may control a rateof a heat transfer in a crystallization process for forming the activepattern 1130, thereby obtaining substantially uniform the active pattern1130. Furthermore, the buffer layer 1115 may improve a surface flatnessof the first substrate 1110 when a surface of the first substrate 1110is relatively irregular. According to a type of the first substrate1110, at least two buffer layers may be provided on the first substrate1110, or the buffer layer may not be disposed.

In an exemplary embodiment, the active pattern 1130 may include an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon,polysilicon, etc.), an organic semiconductor, etc., for example.

The first insulation layer 1150 may be disposed on the active pattern1130. The first insulation layer 1150 may cover the active pattern 1130in the light-emitting region II, and may extend in the first directionon the first substrate 1110. That is, the first insulation layer 1150may be disposed on the entire surface of the first substrate 1110. In anexemplary embodiment, the first insulation layer 1150 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 28, the gate electrode 1170 and the second insulationlayer 1190 are disposed on the first substrate 1110 on which the firstinsulation layer 1150 is disposed.

The gate electrode 1170 may be disposed on a portion of the firstinsulation layer 1150 under which the active pattern 1130 is disposed.In an exemplary embodiment, the gate electrode 1170 may include a metal,an alloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 1190 may be disposed on the gate electrode1170. The second insulation layer 1190 may cover the gate electrode 1170in the light-emitting region II, and may extend in the first directionon the first substrate 1110. That is, the second insulation layer 1190may be disposed on the entire surface of the first substrate 1110. In anexemplary embodiment, the second insulation layer 1190 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 29, the source electrode 1210 and the drain electrode1230 are disposed on the first substrate 1110 on which the secondinsulation layer 1190 is disposed.

The source electrode 1210 and the drain electrode 1230 may be disposedon the second insulation layer 1190. The source electrode 1210 may be incontact with a first side of the active layer 1130 by removing a portionof the first and second insulation layers 1150 and 1190. The drainelectrode 1230 may be in contact with a second side of the active layer1130 by removing a second portion of the first and second insulationlayers 1150 and 1190. In an exemplary embodiment, each of the sourceelectrode 1210 and the drain electrode 1230 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

In the illustrated exemplary embodiment, the gate electrode 1170 isdisposed on the active pattern 1130. However, the invention is notlimited thereto, and the gate electrode 1170 may be disposed under theactive pattern 1130.

Referring to FIG. 30, the third insulation layer 1270 and the firstelectrode 1290 are disposed on the first substrate 1110 on which thesource electrode 1210 and the drain electrode 1230 are disposed.

The third insulation layer 1270 may be disposed on the source electrode1210 and the drain electrode 1230. The third insulation layer 1270 maycover the source electrode 1210 and the drain electrode 1230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 1110. That is, the third insulation layer 1270 may be disposedon the entire surface of the first substrate 1110. In an exemplaryembodiment, the third insulation layer 1270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 1290 may be disposed on the third insulation layer1270. The first electrode 1290 may be in contact with the sourceelectrode 1210 by removing a portion of the third insulation layer 1270.In addition, the first electrode 1290 may be electrically connected tothe semiconductor element 1250. In an exemplary embodiment, the firstelectrode 1290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

Referring to FIG. 31, the pixel defining layer 1310, the light emittinglayer 1330 and the second electrode 1340 are disposed on the firstsubstrate 1110 on which the first electrode 1290 is disposed.

The pixel defining layer 1310 may be disposed the on third insulationlayer 1270 to expose a portion of the first electrode 1290. The pixeldefining layer 1310 may include organic materials or inorganicmaterials. In this case, the light emitting layer 1330 may be disposedon a portion that the first electrode 1290 is exposed by the pixeldefining layer 1310.

The light emitting layer 1330 may be disposed on the exposed firstelectrode 1290. The light emitting layer 1330 may be provided usinglight emitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 1330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 1340 may be disposed on the pixel defining layer1310 and the light emitting layer 1330. The second electrode 1340 maycover the pixel defining layer 1310 and the light emitting layer 1330 inthe light-emitting region II and the reflection region III, and mayextend in the first direction on the first substrate 1110. That is, thesecond electrode 1340 may be electrically connected to the first throughthird pixels. In an exemplary embodiment, the second electrode 1340 mayinclude a metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc., for example. These may be usedalone or in a combination thereof. The first substrate 1110 may becombined with the second substrate 1350 by using a sealing member. Inaddition, a filler may be disposed between the first substrate 1110 andthe second substrate 1350.

Referring to FIG. 32, the first sensing electrode 1370 is disposed onthe first substrate 1110 on which the second electrode 1340 is disposed.

The first sensing electrode 1370 is disposed on a first substrate 1110.The first sensing electrode 370 may be disposed in the reflection regionIII and outside of the light-emitting region II.

The first sensing electrode 1370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 1370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 1370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 1370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

Referring to FIG. 33, the second sensing electrode 1390 is disposed onthe second substrate 1350.

The second sensing electrode 1390 may be disposed on the secondsubstrate 1350. The second sensing electrode 1390 may be disposed in thelight-emitting region II and the reflection region III.

The second sensing electrode 1390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 1390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 1390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode1390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

However, the invention is not limited thereto, and an insulation layermay be disposed between second substrate 1350 and the second sensingelectrode 1390.

FIG. 34 is a plan view illustrating a first sensing electrode of FIG.26. FIG. 35 is a plan view illustrating a second sensing electrode ofFIG. 26. FIG. 36 is a plan view illustrating the first sensing electrodeof FIG. 34 and the second sensing electrode of FIG. 35.

Referring to FIGS. 26 and 34 to 36, a first sensing electrode 1370 and asecond sensing electrode 1390 are illustrated.

The first sensing electrode 1370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode1370 is disposed in the reflection region III. The first sensingelectrode 1370 may be connected to a sensing driving part through afirst connecting line 1375. The first connecting line 1375 may includethe same material as that of the first sensing electrode 1370. The firstconnecting line 1375 may be disposed on the same layer as that on whichthe first sensing electrode 1370 is disposed.

The second sensing electrode 1390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. The second sensing electrode 1390 is disposed in the light-emittingregion II and the reflection region III. The second sensing electrode1390 may be connected to a sensing driving part through a secondconnecting line 1395. The second connecting line 1395 may include thesame material as that of the second sensing electrode 1390. The secondconnecting line 1395 may be disposed on the same layer as that on whichthe second sensing electrode 1390 is disposed.

The first sensing electrode 1370 may include a material having apredetermined reflectivity. The second sensing electrode 1390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 1370 may partially overlap the second sensingelectrode 1390.

The first sensing electrode 1370 may be disposed on the first substrate1110. The second sensing electrode 1390 may be disposed on the secondsubstrate 1350.

The first sensing electrode 1370 and second sensing electrode 1390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 1370 and second sensing electrode 1390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 1370 may have a different thickness from athickness of the second sensing electrode 1390. In an exemplaryembodiment, a thickness of the first sensing electrode 1370 may be about1000 Å, for example. When the thickness of the first sensing electrode1370 is about 1000 Å, transmissivity of the first sensing electrode 1370may be about 0%, and reflexibility of the first sensing electrode 1370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 1390 may be about 100 Å. When the thickness of thesecond sensing electrode 1390 is about 100 Å, transmissivity of thesecond sensing electrode 1390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 1390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 1390 mayperform a mirror function.

FIG. 37 is a plan view illustrating a first sensing electrode of FIG.26. FIG. 38 is a plan view illustrating a second sensing electrode ofFIG. 26. FIG. 39 is a plan view illustrating the first sensing electrodeof FIG. 37 and the second sensing electrode of FIG. 38.

Referring to FIGS. 26 and 37 to 39, a first sensing electrode 1370 and asecond sensing electrode 1390 are illustrated.

The first sensing electrode 1370 may include a plurality of firstsensing patterns 1371 extending in a second direction D2 and a pluralityof first dummy patterns 1373 disposed between the first sensing patterns1371. The first sensing electrode 1370 is disposed in the reflectionregion III. An interval of the first sensing patterns 1371 may beadjusted according to the number of the first dummy patterns 1373. Thefirst sensing electrode 1370 may be connected to a sensing driving partthrough a first connecting line 1375. The first connecting line 1375 mayinclude the same material as that of the first sensing electrode 1370.The first connecting line 1375 may be disposed on the same layer as thaton which the first sensing electrode 1370 is disposed.

The second sensing electrode 1390 may be provided as a plurality ofsecond sensing patterns 1391 extending in a first direction D1 crossingthe second direction D2 and a plurality of second dummy patterns 1393disposed between the second sensing patterns 1391. The second sensingelectrode 1390 is disposed in the light-emitting region II and thereflection region III. An interval of the second sensing electrode 1390may be adjusted according to the number of the second dummy patterns1393. The second sensing electrode 1390 may be connected to a sensingdriving part through a second connecting line 1395. The secondconnecting line 1395 may include the same material as that of the secondsensing electrode 1390. The second connecting line 1395 may be disposedon the same layer as that on which the second sensing electrode 1390 isdisposed.

The first sensing electrode 1370 may include a material having apredetermined reflectivity. The second sensing electrode 1390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 1370 may partially overlap the second sensingelectrode 1390.

The first sensing electrode 1370 may be disposed on the first substrate1110. The second sensing electrode 1390 may be disposed on the secondsubstrate 1350.

The first sensing electrode 1370 and second sensing electrode 1390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 1370 and second sensing electrode 1390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 1370 may have a different thickness from athickness of the second sensing electrode 1390. In an exemplaryembodiment, a thickness of the first sensing electrode 1370 may be about1000 Å, for example. When the thickness of the first sensing electrode1370 is about 1000 Å, transmissivity of the first sensing electrode 1370may be about 0%, and reflexibility of the first sensing electrode 1370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 1390 may be about 100 Å. When the thickness of thesecond sensing electrode 1390 is about 100 Å, transmissivity of thesecond sensing electrode 1390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 1390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 1390 mayperform a mirror function.

FIG. 40 is a plan view illustrating a first sensing electrode of FIG.26. FIG. 41 is a plan view illustrating a second sensing electrode ofFIG. 26. FIG. 42 is a plan view illustrating the first sensing electrodeof FIG. 40 and the second sensing electrode of FIG. 41.

Referring to FIGS. 26 and 40 to 42, a first sensing electrode 1370 and asecond sensing electrode 1390 are illustrated.

The first sensing electrode 1370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode1370 may be provided as a mesh shape. The first sensing electrode 1370is disposed in the reflection region III. The first sensing electrode1370 may be connected to a sensing driving part through a firstconnecting line 1375. The first connecting line 1375 may include thesame material as that of the first sensing electrode 1370. The firstconnecting line 1375 may be disposed on the same layer as that on whichthe first sensing electrode 1370 is disposed.

The second sensing electrode 1390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. A width of the second sensing electrode 1390 in the second directionD2 is the same as a width of the first sensing electrode 1370 in thefirst direction D1. The second sensing electrode 1390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 1390 may be connected to a sensing driving partthrough a second connecting line 1395. The second connecting line 1395may include the same material as that of the second sensing electrode1390. The second connecting line 1395 may be disposed on the same layeras that on which the second sensing electrode 1390 is disposed.

The first sensing electrode 1370 may include a material having apredetermined reflectivity. The second sensing electrode 1390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 1370 may partially overlap the second sensingelectrode 1390.

The first sensing electrode 1370 may be disposed on the first substrate1110. The second sensing electrode 1390 may be disposed on the secondsubstrate 1350.

The first sensing electrode 1370 and second sensing electrode 1390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 1370 and second sensing electrode 1390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 1370 may have a different thickness from athickness of the second sensing electrode 1390. In an exemplaryembodiment, a thickness of the first sensing electrode 1370 may be about1000 Å, for example. When the thickness of the first sensing electrode1370 is about 1000 Å, transmissivity of the first sensing electrode 1370may be about 0%, and reflexibility of the first sensing electrode 1370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 1390 may be about 100 Å. When the thickness of thesecond sensing electrode 1390 is about 100 Å, transmissivity of thesecond sensing electrode 1390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 1390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 1390 mayperform a mirror function.

FIG. 43 is a plan view illustrating a first sensing electrode of FIG.26. FIG. 44 is a plan view magnifying ‘D’ portion of FIG. 43. FIG. 45 isa plan view illustrating a second sensing electrode of FIG. 26. FIG. 46is a plan view magnifying ‘E’ portion of FIG. 45. FIG. 47 is a plan viewillustrating the first sensing electrode of FIG. 43 and the secondsensing electrode of FIG. 45. FIG. 48 is a plan view magnifying ‘F’portion of FIG. 47.

Referring to FIGS. 26 and 43 to 48, a first sensing electrode 1370 and asecond sensing electrode 1390 are illustrated.

The first sensing electrode 1370 may include plurality of first sensingpatterns 1371 having a rhombus shape and sequentially connected eachother in a first direction D1 and a plurality of first dummy patterns1373 having a rhombus shape and disposed between the first sensingpatterns 1371. The first dummy patterns 1373 are spaced apart from eachother. The first sensing electrode 1370 is disposed in the reflectionregion III. The first sensing electrode 1370 may be connected to asensing driving part through a first connecting line 1375. The firstconnecting line 1375 may include the same material as that of the firstsensing electrode 1370. The first connecting line 1375 may be disposedon the same layer as that on which the first sensing electrode 1370 isdisposed.

The second sensing electrode 1390 may include plurality of secondsensing patterns 1391 having a rhombus shape and sequentially connectedeach other in a second direction D2 and a plurality of second dummypatterns 1393 having a rhombus shape and disposed between the secondsensing patterns 1391. The second dummy patterns 1393 are spaced apartfrom each other. The second sensing electrode 1390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 1390 may be connected to a sensing driving partthrough a second connecting line 1395. The second connecting line 1395may include the same material as that of the second sensing electrode1390. The second connecting line 1395 may be disposed on the same layeras that on which the second sensing electrode 1390 is disposed.

The first sensing electrode 1370 may include a material having apredetermined reflectivity. The second sensing electrode 1390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 1370 may partially overlap the second sensingelectrode 1390.

The first sensing electrode 1370 may be disposed on the first substrate1110. The second sensing electrode 1390 may be disposed on the secondsubstrate 1350.

The first sensing electrode 1370 and second sensing electrode 1390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 1370 and second sensing electrode 1390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 1370 may have a different thickness from athickness of the second sensing electrode 1390. In an exemplaryembodiment, a thickness of the first sensing electrode 1370 may be about1000 Å, for example. When the thickness of the first sensing electrode1370 is about 1000 Å, transmissivity of the first sensing electrode 1370may be about 0%, and reflexibility of the first sensing electrode 1370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 1390 may be about 100 Å. When the thickness of thesecond sensing electrode 1390 is about 100 Å, transmissivity of thesecond sensing electrode 1390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 1390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 1390 mayperform a mirror function.

FIG. 49 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention. FIG. 50 isa cross-sectional view taken along line V-V′ of FIG. 49.

An organic light emitting display device according to the illustratedexemplary embodiment is substantially same as the organic light emittingdisplay device of FIGS. 1 and 2 except for a first sensing electrode2370, a fourth insulation layer 2385 and a second sensing electrode 2390and thus similar reference numerals are used for same elements andrepetitive explanation will be omitted.

Referring to FIGS. 49 and 50, the first sensing electrode 2370 isdisposed on a second substrate 2350. The first sensing electrode 2370may be disposed in the reflection region III and outside of thelight-emitting region II. The fourth insulation layer 2385 is disposedon the first sensing electrode 2370. The second sensing electrode 2390is disposed on the fourth insulation layer 2385.

The first sensing electrode 2370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 2370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 2370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 2370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The second substrate 2350 and the first substrate 2110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 2350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc., forexample. In exemplary embodiments, the second substrate 2350 may includea transparent inorganic material or flexible plastic. In an exemplaryembodiment, the second substrate 2350 may include a flexible transparentresin substrate, for example. In this case, to increase flexibility ofthe organic light emitting display device 2100, the second substrate2350 may include a stacked structure where at least one organic layerand at least one inorganic layer are alternately stacked.

The fourth insulation layer 2385 is disposed on the first sensingelectrode 2370. The fourth insulation layer 2385 may includes anadhesive material.

The second sensing electrode 2390 is disposed on the fourth insulationlayer 2385. The second sensing electrode 2390 may be disposed in thelight-emitting region II and the reflection region III.

The second sensing electrode 2390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 2390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 2390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode2390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The first sensing electrode 2370 may have a different thickness from athickness of the second sensing electrode 2390. In an exemplaryembodiment, a thickness of the first sensing electrode 2370 may be about1000 Å, for example. When the thickness of the first sensing electrode2370 is about 1000 Å, transmissivity of the first sensing electrode 2370may be about 0%, and reflexibility of the first sensing electrode 2370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 2390 may be about 100 Å. When the thickness of thesecond sensing electrode 2390 is about 100 Å, transmissivity of thesecond sensing electrode 2390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 2390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 2390 mayperform a mirror function.

FIGS. 51 to 58 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 50.

Referring to FIG. 51, the buffer layer 2115 is disposed on the firstsubstrate 2110. Thereafter, the active pattern 2130 and the firstinsulation layer 2150 are disposed on the buffer layer 2115.

In an exemplary embodiment, the first substrate 2110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example.

The light emitting structure may be disposed on the first substrate2110. The first substrate 2110 may include transparent materials. In anexemplary embodiment, the first substrate 2110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 2110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 2110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 2110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 2250, a capacitor, the first electrode 2290, thelight emitting layer 2330, the second electrode 2340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 2110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 2100 includes the light-emitting region II and thereflection region III, the first substrate 2110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 2115 may be disposed on the first substrate 2110. Thebuffer layer 2115 may extend from the light-emitting region II into thereflection region III. The buffer layer 2115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 2110. Additionally, the buffer layer 2115 may control a rateof a heat transfer in a crystallization process for forming the activepattern 2130, thereby obtaining substantially uniform the active pattern2130. Furthermore, the buffer layer 2115 may improve a surface flatnessof the first substrate 2110 when a surface of the first substrate 2110is relatively irregular. According to a type of the first substrate2110, at least two buffer layers may be provided on the first substrate2110, or the buffer layer may not be disposed.

In an exemplary embodiment, the active pattern 2130 may include an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon,polysilicon, etc.), an organic semiconductor, etc., for example.

The first insulation layer 2150 may be disposed on the active pattern2130. The first insulation layer 2150 may cover the active pattern 2130in the light-emitting region II, and may extend in the first directionon the first substrate 2110. That is, the first insulation layer 2150may be disposed on the entire surface of the first substrate 2110. In anexemplary embodiment, the first insulation layer 2150 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 52, the gate electrode 2170 and the second insulationlayer 2190 are disposed on the first substrate 2110 on which the firstinsulation layer 2150 is disposed.

The gate electrode 2170 may be disposed on a portion of the firstinsulation layer 2150 under which the active pattern 2130 is disposed.In an exemplary embodiment, the gate electrode 2170 may include a metal,an alloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 2190 may be disposed on the gate electrode2170. The second insulation layer 2190 may cover the gate electrode 2170in the light-emitting region II, and may extend in the first directionon the first substrate 2110. That is, the second insulation layer 2190may be disposed on the entire surface of the first substrate 2110. In anexemplary embodiment, the second insulation layer 2190 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 53, the source electrode 2210 and the drain electrode2230 are disposed on the first substrate 2110 on which the secondinsulation layer 2190 is disposed.

The source electrode 2210 and the drain electrode 2230 may be disposedon the second insulation layer 2190. The source electrode 2210 may be incontact with a first side of the active layer 2130 by removing a portionof the first and second insulation layers 2150 and 2190. The drainelectrode 2230 may be in contact with a second side of the active layer2130 by removing a second portion of the first and second insulationlayers 2150 and 2190. In an exemplary embodiment, each of the sourceelectrode 2210 and the drain electrode 2230 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

In the illustrated exemplary embodiment, the gate electrode 2170 isdisposed on the active pattern 2130. However, the invention is notlimited thereto, and the gate electrode 2170 may be disposed under theactive pattern 2130.

Referring to FIG. 54, the third insulation layer 2270 and the firstelectrode 2290 are disposed on the first substrate 2110 on which thesource electrode 2210 and the drain electrode 2230 are disposed.

The third insulation layer 2270 may be disposed on the source electrode2210 and the drain electrode 2230. The third insulation layer 2270 maycover the source electrode 2210 and the drain electrode 2230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 2110. That is, the third insulation layer 2270 may be disposedon the entire surface of the first substrate 2110. In an exemplaryembodiment, the third insulation layer 2270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 2290 may be disposed on the third insulation layer2270. The first electrode 2290 may be in contact with the sourceelectrode 2210 by removing a portion of the third insulation layer 2270.In addition, the first electrode 2290 may be electrically connected tothe semiconductor element 2250. In an exemplary embodiment, the firstelectrode 2290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

Referring to FIG. 55, the pixel defining layer 2310, the light emittinglayer 2330 and the second electrode 2340 are disposed on the firstsubstrate 2110 on which the first electrode 2290 is disposed.

The pixel defining layer 2310 may be disposed the on third insulationlayer 2270 to expose a portion of the first electrode 2290. The pixeldefining layer 2310 may include organic materials or inorganicmaterials. In this case, the light emitting layer 2330 may be disposedon a portion that the first electrode 2290 is exposed by the pixeldefining layer 2310.

The light emitting layer 2330 may be disposed on the exposed firstelectrode 2290. The light emitting layer 2330 may be provided usinglight emitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 2330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 2340 may be disposed on the pixel defining layer2310 and the light emitting layer 2330. The second electrode 2340 maycover the pixel defining layer 2310 and the light emitting layer 2330 inthe light-emitting region II and the reflection region III, and mayextend in the first direction on the first substrate 2110. That is, thesecond electrode 2340 may be electrically connected to the first throughthird pixels. In an exemplary embodiment, the second electrode 2340 mayinclude a metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc., for example. These may be usedalone or in a combination thereof. The first substrate 2110 may becombined with the second substrate 2350 by using a sealing member. Inaddition, a filler may be disposed between the first substrate 2110 andthe second substrate 2350.

Referring to FIG. 56, the first sensing electrode 2370 is disposed onthe second substrate 2350.

The first sensing electrode 2370 may be disposed on a first surface ofthe second substrate 2350. A first surface of the first sensingelectrode 2370 may face the second electrode 2340, and a second surfaceopposing the first surface of the first sensing electrode 2370 maycontact with the second substrate 2350. The first sensing electrode 2370may be disposed in the reflection region III and outside of thelight-emitting region II. However, the invention is not limited thereto,and an insulation layer may be disposed between the second substrate2350 and the first sensing electrode 2370.

The first sensing electrode 2370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 2370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 2370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 2370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The second substrate 2350 and the first substrate 2110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 2350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc., forexample.

Referring to FIG. 57, the fourth insulation layer 2385 is disposed onthe second substrate 2350 on which the first sensing electrode 2370 isdisposed.

The fourth insulation layer 2385 may prevent from oxidation of the firstsensing electrode 2370. The fourth insulation layer 2385 may include anadhesive material. The fourth insulation layer 2385 may prevent fromseparating of the first sensing electrode 2370 and the second sensingelectrode 2390 from the second substrate 2350. The fourth insulationlayer 2385 may insulate between the first sensing electrode 2370 and thesecond sensing electrode 2390.

Referring to FIG. 58, the second sensing electrode 2390 is disposed onthe fourth insulation layer 2385.

The second sensing electrode 2390 may be disposed in the light-emittingregion II and the reflection region III.

The second sensing electrode 2390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 2390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 2390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode2390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

FIG. 59 is a plan view illustrating a first sensing electrode of FIG.50. FIG. 60 is a plan view illustrating a second sensing electrode ofFIG. 50. FIG. 61 is a plan view illustrating the first sensing electrodeof FIG. 59 and the second sensing electrode of FIG. 60.

Referring to FIGS. 50 and 59 to 61, a first sensing electrode 2370 and asecond sensing electrode 2390 are illustrated.

The first sensing electrode 2370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode2370 is disposed in the reflection region III. The first sensingelectrode 2370 may be connected to a sensing driving part through afirst connecting line 2375. The first connecting line 2375 may includethe same material as that of the first sensing electrode 2370. The firstconnecting line 2375 may be disposed on the same layer as that on whichthe first sensing electrode 2370 is disposed.

The second sensing electrode 2390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. The second sensing electrode 2390 is disposed in the light-emittingregion II and the reflection region III. The second sensing electrode2390 may be connected to a sensing driving part through a secondconnecting line 2395. The second connecting line 2395 may include thesame material as that of the second sensing electrode 2390. The secondconnecting line 2395 may be disposed on the same layer as that on whichthe second sensing electrode 2390 is disposed.

The first sensing electrode 2370 may include a material having apredetermined reflectivity. The second sensing electrode 2390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 2370 may partially overlap the second sensingelectrode 2390.

The first sensing electrode 2370 may be disposed on a first surface ofthe second substrate 2350. The fourth insulation layer 2385 is disposedon the first sensing electrode 2370. The second sensing electrode 2390is disposed on the fourth insulation layer 2385.

The first sensing electrode 2370 and second sensing electrode 2390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 2370 and second sensing electrode 2390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 2370 may have a different thickness from athickness of the second sensing electrode 2390. In an exemplaryembodiment, a thickness of the first sensing electrode 2370 may be about1000 Å, for example. When the thickness of the first sensing electrode2370 is about 1000 Å, transmissivity of the first sensing electrode 2370may be about 0%, and reflexibility of the first sensing electrode 2370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 2390 may be about 100 Å. When the thickness of thesecond sensing electrode 2390 is about 100 Å, transmissivity of thesecond sensing electrode 2390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 2390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 2390 mayperform a mirror function.

FIG. 62 is a plan view illustrating a first sensing electrode of FIG.50. FIG. 63 is a plan view illustrating a second sensing electrode ofFIG. 50. FIG. 64 is a plan view illustrating the first sensing electrodeof FIG. 62 and the second sensing electrode of FIG. 63.

Referring to FIGS. 50 and 62 to 64, a first sensing electrode 2370 and asecond sensing electrode 2390 are illustrated.

The first sensing electrode 2370 may include a plurality of firstsensing patterns 2371 extending in a second direction D2 and a pluralityof first dummy patterns 2373 disposed between the first sensing patterns2371. The first sensing electrode 2370 is disposed in the reflectionregion III. An interval of the first sensing patterns 2371 may beadjusted according to the number of the first dummy patterns 2373. Thefirst sensing electrode 2370 may be connected to a sensing driving partthrough a first connecting line 2375. The first connecting line 2375 mayinclude the same material as that of the first sensing electrode 2370.The first connecting line 2375 may be disposed on the same layer as thaton which the first sensing electrode 2370 is disposed.

The second sensing electrode 2390 may be provided as a plurality ofsecond sensing patterns 2391 extending in a first direction D1 crossingthe second direction D2 and a plurality of second dummy patterns 2393disposed between the second sensing patterns 2391. The second sensingelectrode 2390 is disposed in the light-emitting region II and thereflection region III. An interval of the second sensing electrode 2390may be adjusted according to the number of the second dummy patterns2393. The second sensing electrode 2390 may be connected to a sensingdriving part through a second connecting line 2395. The secondconnecting line 2395 may include the same material as that of the secondsensing electrode 2390. The second connecting line 2395 may be disposedon the same layer as that on which the second sensing electrode 2390 isdisposed.

The first sensing electrode 2370 may include a material having apredetermined reflectivity. The second sensing electrode 2390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 2370 may partially overlap the second sensingelectrode 2390.

The first sensing electrode 2370 may be disposed on a first surface ofthe second substrate 2350. The fourth insulation layer 2385 is disposedon the first sensing electrode 2370. The second sensing electrode 2390is disposed on the fourth insulation layer 2385.

The first sensing electrode 2370 and second sensing electrode 2390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 2370 and second sensing electrode 2390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 2370 may have a different thickness from athickness of the second sensing electrode 2390. In an exemplaryembodiment, a thickness of the first sensing electrode 2370 may be about1000 Å, for example. When the thickness of the first sensing electrode2370 is about 1000 Å, transmissivity of the first sensing electrode 2370may be about 0%, and reflexibility of the first sensing electrode 2370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 2390 may be about 100 Å. When the thickness of thesecond sensing electrode 2390 is about 100 Å, transmissivity of thesecond sensing electrode 2390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 2390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 2390 mayperform a mirror function.

FIG. 65 is a plan view illustrating a first sensing electrode of FIG.50. FIG. 66 is a plan view illustrating a second sensing electrode ofFIG. 50. FIG. 67 is a plan view illustrating the first sensing electrodeof FIG. 65 and the second sensing electrode of FIG. 66.

Referring to FIGS. 50 and 65 to 67, a first sensing electrode 2370 and asecond sensing electrode 2390 are illustrated.

The first sensing electrode 2370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode2370 may be provided as a mesh shape. The first sensing electrode 2370is disposed in the reflection region III. The first sensing electrode2370 may be connected to a sensing driving part through a firstconnecting line 2375. The first connecting line 2375 may include thesame material as that of the first sensing electrode 2370. The firstconnecting line 2375 may be disposed on the same layer as that on whichthe first sensing electrode 2370 is disposed.

The second sensing electrode 2390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. A width of the second sensing electrode 2390 in the second directionD2 is the same as a width of the first sensing electrode 2370 in thefirst direction D1. The second sensing electrode 2390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 2390 may be connected to a sensing driving partthrough a second connecting line 2395. The second connecting line 2395may include the same material as that of the second sensing electrode2390. The second connecting line 2395 may be disposed on the same layeras that on which the second sensing electrode 2390 is disposed.

The first sensing electrode 2370 may be disposed on a first surface ofthe second substrate 2350. The fourth insulation layer 2385 is disposedon the first sensing electrode 2370. The second sensing electrode 2390is disposed on the fourth insulation layer 2385.

The first sensing electrode 2370 and second sensing electrode 2390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 2370 and second sensing electrode 2390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 2370 may have a different thickness from athickness of the second sensing electrode 2390. In an exemplaryembodiment, a thickness of the first sensing electrode 2370 may be about1000 Å, for example. When the thickness of the first sensing electrode2370 is about 1000 Å, transmissivity of the first sensing electrode 2370may be about 0%, and reflexibility of the first sensing electrode 2370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 2390 may be about 100 Å. When the thickness of thesecond sensing electrode 2390 is about 100 Å, transmissivity of thesecond sensing electrode 2390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 2390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 2390 mayperform a mirror function.

FIG. 68 is a plan view illustrating a first sensing electrode of FIG.50. FIG. 69 is a plan view magnifying ‘G’ portion of FIG. 68. FIG. 70 isa plan view illustrating a second sensing electrode of FIG. 50. FIG. 71is a plan view magnifying ‘H’ portion of FIG. 70. FIG. 72 is a plan viewillustrating the first sensing electrode of FIG. 68 and the secondsensing electrode of FIG. 70. FIG. 73 is a plan view magnifying ‘I’portion of FIG. 72.

Referring to FIGS. 50 and 68 to 73, a first sensing electrode 2370 and asecond sensing electrode 2390 are illustrated.

The first sensing electrode 2370 may include plurality of first sensingpatterns 2371 having a rhombus shape and sequentially connected eachother in a first direction D1 and a plurality of first dummy patterns2373 having a rhombus shape and disposed between the first sensingpatterns 2371. The first dummy patterns 2373 are spaced apart from eachother. The first sensing electrode 2370 is disposed in the reflectionregion III. The first sensing electrode 2370 may be connected to asensing driving part through a first connecting line 2375. The firstconnecting line 2375 may include the same material as that of the firstsensing electrode 2370. The first connecting line 2375 may be disposedon the same layer as that on which the first sensing electrode 2370 isdisposed.

The second sensing electrode 2390 may include plurality of secondsensing patterns 2391 having a rhombus shape and sequentially connectedeach other in a second direction D2 and a plurality of second dummypatterns 2393 having a rhombus shape and disposed between the secondsensing patterns 2391. The second dummy patterns 2393 are spaced apartfrom each other. The second sensing electrode 2390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 2390 may be connected to a sensing driving partthrough a second connecting line 2395. The second connecting line 2395may include the same material as that of the second sensing electrode2390. The second connecting line 2395 may be disposed on the same layeras that on which the second sensing electrode 2390 is disposed.

The first sensing electrode 2370 may include a material having apredetermined reflectivity. The second sensing electrode 2390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 2370 may partially overlap the second sensingelectrode 2390.

The first sensing electrode 2370 may be disposed on a first surface ofthe second substrate 2350. The fourth insulation layer 2385 is disposedon the first sensing electrode 2370. The second sensing electrode 2390is disposed on the fourth insulation layer 2385.

The first sensing electrode 2370 and second sensing electrode 2390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 2370 and second sensing electrode 2390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 2370 may have a different thickness from athickness of the second sensing electrode 2390. In an exemplaryembodiment, a thickness of the first sensing electrode 2370 may be about1000 Å, for example. When the thickness of the first sensing electrode2370 is about 1000 Å, transmissivity of the first sensing electrode 2370may be about 0%, and reflexibility of the first sensing electrode 2370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 2390 may be about 100 Å. When the thickness of thesecond sensing electrode 2390 is about 100 Å, transmissivity of thesecond sensing electrode 2390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 2390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 2390 mayperform a mirror function.

FIG. 74 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention. FIG. 75 isa cross-sectional view taken along line VI-VI′ of FIG. 74.

An organic light emitting display device according to the illustratedexemplary embodiment is substantially same as the organic light emittingdisplay device of FIGS. 1 and 2 except for a first sensing electrode3370, a fourth insulation layer 3385 and a second sensing electrode 3390and thus similar reference numerals are used for same elements andrepetitive explanation will be omitted.

Referring to FIGS. 74 and 75, the second sensing electrode 3390 isdisposed on a second substrate 3350. The second sensing electrode 3390may be disposed in the reflection region III and the light-emittingregion II. The fourth insulation layer 3385 is disposed on the secondsensing electrode 3390. The first sensing electrode 3370 is disposed onthe fourth insulation layer 3385.

The second sensing electrode 3390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 3390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 3390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode3390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The second substrate 3350 and the first substrate 3110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 3350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc., forexample. In exemplary embodiments, the second substrate 3350 may includea transparent inorganic material or flexible plastic. In an exemplaryembodiment, the second substrate 3350 may include a flexible transparentresin substrate, for example. In this case, to increase flexibility ofthe organic light emitting display device 3100, the second substrate3350 may include a stacked structure where at least one organic layerand at least one inorganic layer are alternately stacked.

The fourth insulation layer 3385 is disposed on the second sensingelectrode 3390. The fourth insulation layer 3385 may includes anadhesive material.

The first sensing electrode 3370 is disposed on the fourth insulationlayer 3385. The first sensing electrode 3370 may be disposed in thelight-emitting region II and outside of the reflection region III.

The first sensing electrode 3370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 3370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 3370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 3370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The first sensing electrode 3370 may have a different thickness from athickness of the second sensing electrode 3390. In an exemplaryembodiment, a thickness of the first sensing electrode 3370 may be about1000 Å, for example. When the thickness of the first sensing electrode3370 is about 1000 Å, transmissivity of the first sensing electrode 3370may be about 0%, and reflexibility of the first sensing electrode 3370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 3390 may be about 100 Å. When the thickness of thesecond sensing electrode 3390 is about 100 Å, transmissivity of thesecond sensing electrode 3390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 3390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 3390 mayperform a mirror function.

FIGS. 76 to 83 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 75.

Referring to FIG. 76, the buffer layer 3115 is disposed on the firstsubstrate 3110. Thereafter, the active pattern 3130 and the firstinsulation layer 3150 are disposed on the buffer layer 3115.

In an exemplary embodiment, the first substrate 3110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example.

The light emitting structure may be disposed on the first substrate3110. The first substrate 3110 may include transparent materials. In anexemplary embodiment, the first substrate 3110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 3110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 3110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 3110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 3250, a capacitor, the first electrode 3290, thelight emitting layer 3330, the second electrode 3340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 3110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 3100 includes the light-emitting region II and thereflection region III, the first substrate 3110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 3115 may be disposed on the first substrate 3110. Thebuffer layer 3115 may extend from the light-emitting region II into thereflection region III. The buffer layer 3115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 110. Additionally, the buffer layer 3115 may control a rate ofa heat transfer in a crystallization process for forming the activepattern 3130, thereby obtaining substantially uniform the active pattern3130. Furthermore, the buffer layer 3115 may improve a surface flatnessof the first substrate 3110 when a surface of the first substrate 3110is relatively irregular. According to a type of the first substrate3110, at least two buffer layers may be provided on the first substrate3110, or the buffer layer may not be disposed.

In an exemplary embodiment, the active pattern 3130 may include an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon,polysilicon, etc.), an organic semiconductor, etc., for example.

The first insulation layer 3150 may be disposed on the active pattern3130. The first insulation layer 3150 may cover the active pattern 3130in the light-emitting region II, and may extend in the first directionon the first substrate 3110. That is, the first insulation layer 3150may be disposed on the entire surface of the first substrate 3110. In anexemplary embodiment, the first insulation layer 3150 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 77, the gate electrode 3170 and the second insulationlayer 3190 are disposed on the first substrate 3110 on which the firstinsulation layer 3150 is disposed.

The gate electrode 3170 may be disposed on a portion of the firstinsulation layer 3150 under which the active pattern 3130 is disposed.In an exemplary embodiment, the gate electrode 3170 may include a metal,an alloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 3190 may be disposed on the gate electrode3170. The second insulation layer 3190 may cover the gate electrode 3170in the light-emitting region II, and may extend in the first directionon the first substrate 3110. That is, the second insulation layer 3190may be disposed on the entire surface of the first substrate 3110. In anexemplary embodiment, the second insulation layer 3190 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 78, the source electrode 3210 and the drain electrode3230 are disposed on the first substrate 3110 on which the secondinsulation layer 3190 is disposed.

The source electrode 3210 and the drain electrode 3230 may be disposedon the second insulation layer 3190. The source electrode 3210 may be incontact with a first side of the active layer 3130 by removing a portionof the first and second insulation layers 3150 and 3190. The drainelectrode 3230 may be in contact with a second side of the active layer3130 by removing a second portion of the first and second insulationlayers 3150 and 3190. In an exemplary embodiment, each of the sourceelectrode 3210 and the drain electrode 3230 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

In the illustrated exemplary embodiment, the gate electrode 3170 isdisposed on the active pattern 3130. However, the invention is notlimited thereto, and the gate electrode 3170 may be disposed under theactive pattern 3130.

Referring to FIG. 79, the third insulation layer 3270 and the firstelectrode 3290 are disposed on the first substrate 3110 on which thesource electrode 3210 and the drain electrode 3230 are disposed.

The third insulation layer 3270 may be disposed on the source electrode3210 and the drain electrode 3230. The third insulation layer 3270 maycover the source electrode 3210 and the drain electrode 3230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 3110. That is, the third insulation layer 3270 may be disposedon the entire surface of the first substrate 3110. In an exemplaryembodiment, the third insulation layer 3270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 3290 may be disposed on the third insulation layer3270. The first electrode 3290 may be in contact with the sourceelectrode 3210 by removing a portion of the third insulation layer 3270.In addition, the first electrode 3290 may be electrically connected tothe semiconductor element 3250. In an exemplary embodiment, the firstelectrode 3290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

Referring to FIG. 80, the pixel defining layer 3310, the light emittinglayer 3330 and the second electrode 3340 are disposed on the firstsubstrate 3110 on which the first electrode 3290 is disposed.

The pixel defining layer 3310 may be disposed the on third insulationlayer 3270 to expose a portion of the first electrode 3290. The pixeldefining layer 3310 may include organic materials or inorganicmaterials. In this case, the light emitting layer 3330 may be disposedon a portion that the first electrode 3290 is exposed by the pixeldefining layer 3310.

The light emitting layer 3330 may be disposed on the exposed firstelectrode 3290. The light emitting layer 3330 may be provided usinglight emitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 3330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 3340 may be disposed on the pixel defining layer3310 and the light emitting layer 3330. The second electrode 3340 maycover the pixel defining layer 3310 and the light emitting layer 3330 inthe light-emitting region II and the reflection region III, and mayextend in the first direction on the first substrate 3110. That is, thesecond electrode 3340 may be electrically connected to the first throughthird pixels. In an exemplary embodiment, the second electrode 3340 mayinclude a metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc., for example. These may be usedalone or in a combination thereof. The first substrate 3110 may becombined with the second substrate 3350 by using a sealing member. Inaddition, a filler may be disposed between the first substrate 3110 andthe second substrate 3350.

Referring to FIG. 81, the second sensing electrode 3390 is disposed onthe second substrate 3350.

The second sensing electrode 3390 may be disposed on a first surface ofthe second substrate 3350. A first surface of the second sensingelectrode 3390 may face the second electrode 3340, and a second surfaceopposing the first surface of the second sensing electrode 3390 maycontact with the second substrate 3350.

The second sensing electrode 3390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 3390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 3390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode3390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The second substrate 3350 and the first substrate 3110 may includesubstantially the same materials. In an exemplary embodiment, the secondsubstrate 3350 may include quartz, synthetic quartz, calcium fluoride,fluoride-doping quartz, sodalime glass, non-alkali glass etc., forexample. In exemplary embodiments, the second substrate 3350 may includea transparent inorganic material or flexible plastic. In an exemplaryembodiment, the second substrate 3350 may include a flexible transparentresin substrate, for example. In this case, to increase flexibility ofthe organic light emitting display device 3100, the second substrate3350 may include a stacked structure where at least one organic layerand at least one inorganic layer are alternately stacked.

Referring to FIG. 82, the fourth insulation layer 3385 is disposed onthe second substrate 3350 on which the second sensing electrode 3390 isdisposed.

The fourth insulation layer 3385 may prevent from oxidation of thesecond sensing electrode 3390. The fourth insulation layer 3385 mayinclude an adhesive material. The fourth insulation layer 3385 mayprevent from separating of the first sensing electrode 3370 and thesecond sensing electrode 3390 from the second substrate 3350. The fourthinsulation layer 3385 may insulate between the first sensing electrode3370 and the second sensing electrode 3390.

Referring to FIG. 83, the first sensing electrode 3370 is disposed onthe fourth insulation layer 3385.

The first sensing electrode 3370 may be disposed in the light-emittingregion II and outside of the reflection region III.

The first sensing electrode 3370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 3370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 3370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 3370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

FIG. 84 is a plan view illustrating a first sensing electrode of FIG.75. FIG. 85 is a plan view illustrating a second sensing electrode ofFIG. 75. FIG. 86 is a plan view illustrating the first sensing electrodeof FIG. 84 and the second sensing electrode of FIG. 85.

Referring to FIGS. 75 and 84 to 86, a first sensing electrode 3370 and asecond sensing electrode 3390 are illustrated.

The first sensing electrode 3370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode3370 is disposed in the reflection region III. The first sensingelectrode 3370 may be connected to a sensing driving part through afirst connecting line 3375. The first connecting line 3375 may includethe same material as that of the first sensing electrode 3370. The firstconnecting line 3375 may be disposed on the same layer as that on whichthe first sensing electrode 3370 is disposed.

The second sensing electrode 3390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. The second sensing electrode 3390 is disposed in the light-emittingregion II and the reflection region III. The second sensing electrode3390 may be connected to a sensing driving part through a secondconnecting line 3395. The second connecting line 3395 may include thesame material as that of the second sensing electrode 3390. The secondconnecting line 3395 may be disposed on the same layer as that on whichthe second sensing electrode 3390 is disposed.

The first sensing electrode 3370 may include a material having apredetermined reflectivity. The second sensing electrode 3390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 3370 may partially overlap the second sensingelectrode 3390.

The second sensing electrode 3390 is disposed on a second substrate3350. The fourth insulation layer 3385 is disposed on the second sensingelectrode 3390. The first sensing electrode 3370 is disposed on thefourth insulation layer 3385.

The first sensing electrode 3370 and second sensing electrode 3390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 3370 and second sensing electrode 3390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 3370 may have a different thickness from athickness of the second sensing electrode 3390. In an exemplaryembodiment, a thickness of the first sensing electrode 3370 may be about1000 Å, for example. When the thickness of the first sensing electrode3370 is about 1000 Å, transmissivity of the first sensing electrode 3370may be about 0%, and reflexibility of the first sensing electrode 3370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 3390 may be about 100 Å. When the thickness of thesecond sensing electrode 3390 is about 100 Å, transmissivity of thesecond sensing electrode 3390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 3390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 3390 mayperform a mirror function.

FIG. 87 is a plan view illustrating a first sensing electrode of FIG.75. FIG. 88 is a plan view illustrating a second sensing electrode ofFIG. 75. FIG. 89 is a plan view illustrating the first sensing electrodeof FIG. 87 and the second sensing electrode of FIG. 88.

Referring to FIGS. 75 and 87 to 89, a first sensing electrode 3370 and asecond sensing electrode 3390 are illustrated.

The first sensing electrode 3370 may include a plurality of firstsensing patterns 3371 extending in a second direction D2 and a pluralityof first dummy patterns 3373 disposed between the first sensing patterns3371. The first sensing electrode 3370 is disposed in the reflectionregion III. An interval of the first sensing patterns 3371 may beadjusted according to the number of the first dummy patterns 3373. Thefirst sensing electrode 3370 may be connected to a sensing driving partthrough a first connecting line 3375. The first connecting line 3375 mayinclude the same material as that of the first sensing electrode 3370.The first connecting line 3375 may be disposed on the same layer as thaton which the first sensing electrode 3370 is disposed.

The second sensing electrode 3390 may be provided as a plurality ofsecond sensing patterns 3391 extending in a first direction D1 crossingthe second direction D2 and a plurality of second dummy patterns 3393disposed between the second sensing patterns 3391. The second sensingelectrode 3390 is disposed in the light-emitting region II and thereflection region III. An interval of the second sensing electrode 3390may be adjusted according to the number of the second dummy patterns3393. The second sensing electrode 3390 may be connected to a sensingdriving part through a second connecting line 3395. The secondconnecting line 3395 may include the same material as that of the secondsensing electrode 3390. The second connecting line 3395 may be disposedon the same layer as that on which the second sensing electrode 3390 isdisposed.

The first sensing electrode 3370 may include a material having apredetermined reflectivity. The second sensing electrode 3390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 3370 may partially overlap the second sensingelectrode 3390.

The second sensing electrode 3390 is disposed on a second substrate3350. The fourth insulation layer 3385 is disposed on the second sensingelectrode 3390. The first sensing electrode 3370 is disposed on thefourth insulation layer 3385.

The first sensing electrode 3370 and second sensing electrode 3390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 3370 and second sensing electrode 3390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 3370 may have a different thickness from athickness of the second sensing electrode 3390. In an exemplaryembodiment, a thickness of the first sensing electrode 3370 may be about1000 Å, for example. When the thickness of the first sensing electrode3370 is about 1000 Å, transmissivity of the first sensing electrode 3370may be about 0%, and reflexibility of the first sensing electrode 3370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 3390 may be about 100 Å. When the thickness of thesecond sensing electrode 3390 is about 100 Å, transmissivity of thesecond sensing electrode 3390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 3390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 3390 mayperform a mirror function.

FIG. 90 is a plan view illustrating a first sensing electrode of FIG.75. FIG. 91 is a plan view illustrating a second sensing electrode ofFIG. 75. FIG. 92 is a plan view illustrating the first sensing electrodeof FIG. 90 and the second sensing electrode of FIG. 91.

Referring to FIGS. 75 and 90 to 92, a first sensing electrode 3370 and asecond sensing electrode 3390 are illustrated.

The first sensing electrode 3370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode3370 may be provided as a mesh shape. The first sensing electrode 3370is disposed in the reflection region III. The first sensing electrode3370 may be connected to a sensing driving part through a firstconnecting line 3375. The first connecting line 3375 may include thesame material as that of the first sensing electrode 3370. The firstconnecting line 3375 may be disposed on the same layer as that on whichthe first sensing electrode 3370 is disposed.

The second sensing electrode 3390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. A width of the second sensing electrode 3390 in the second directionD2 is the same as a width of the first sensing electrode 3370 in thefirst direction D1. The second sensing electrode 3390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 3390 may be connected to a sensing driving partthrough a second connecting line 3395. The second connecting line 3395may include the same material as that of the second sensing electrode3390. The second connecting line 3395 may be disposed on the same layeras that on which the second sensing electrode 3390 is disposed.

The first sensing electrode 3370 may include a material having apredetermined reflectivity. The second sensing electrode 3390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 3370 may partially overlap the second sensingelectrode 3390.

The second sensing electrode 3390 is disposed on a second substrate3350. The fourth insulation layer 3385 is disposed on the second sensingelectrode 3390. The first sensing electrode 3370 is disposed on thefourth insulation layer 3385.

The first sensing electrode 3370 and second sensing electrode 3390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 3370 and second sensing electrode 3390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 3370 may have a different thickness from athickness of the second sensing electrode 3390. In an exemplaryembodiment, a thickness of the first sensing electrode 3370 may be about1000 Å, for example. When the thickness of the first sensing electrode3370 is about 1000 Å, transmissivity of the first sensing electrode 3370may be about 0%, and reflexibility of the first sensing electrode 3370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 3390 may be about 100 Å. When the thickness of thesecond sensing electrode 3390 is about 100 Å, transmissivity of thesecond sensing electrode 3390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 3390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 3390 mayperform a mirror function.

FIG. 93 is a plan view illustrating a first sensing electrode of FIG.75. FIG. 94 is a plan view magnifying ‘J’ portion of FIG. 93. FIG. 95 isa plan view illustrating a second sensing electrode of FIG. 75. FIG. 96is a plan view magnifying ‘K’ portion of FIG. 95. FIG. 97 is a plan viewillustrating the first sensing electrode of FIG. 93 and the secondsensing electrode of FIG. 95. FIG. 98 is a plan view magnifying ‘L’portion of FIG. 97.

Referring to FIGS. 75 and 93 to 98, a first sensing electrode 3370 and asecond sensing electrode 3390 are illustrated.

The first sensing electrode 3370 may include plurality of first sensingpatterns 3371 having a rhombus shape and sequentially connected eachother in a first direction D1 and a plurality of first dummy patterns3373 having a rhombus shape and disposed between the first sensingpatterns 3371. The first dummy patterns 3373 are spaced apart from eachother. The first sensing electrode 3370 is disposed in the reflectionregion III. The first sensing electrode 3370 may be connected to asensing driving part through a first connecting line 3375. The firstconnecting line 3375 may include the same material as that of the firstsensing electrode 3370. The first connecting line 3375 may be disposedon the same layer as that on which the first sensing electrode 3370 isdisposed.

The second sensing electrode 3390 may include plurality of secondsensing patterns 3391 having a rhombus shape and sequentially connectedeach other in a second direction D2 and a plurality of second dummypatterns 3393 having a rhombus shape and disposed between the secondsensing patterns 3391. The second dummy patterns 3393 are spaced apartfrom each other. The second sensing electrode 3390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 3390 may be connected to a sensing driving partthrough a second connecting line 3395. The second connecting line 3395may include the same material as that of the second sensing electrode3390. The second connecting line 3395 may be disposed on the same layeras that on which the second sensing electrode 3390 is disposed.

The first sensing electrode 3370 may include a material having apredetermined reflectivity. The second sensing electrode 3390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 3370 may partially overlap the second sensingelectrode 3390.

The second sensing electrode 3390 is disposed on a second substrate3350. The fourth insulation layer 3385 is disposed on the second sensingelectrode 3390. The first sensing electrode 3370 is disposed on thefourth insulation layer 3385.

The first sensing electrode 3370 and second sensing electrode 3390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 3370 and second sensing electrode 3390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 3370 may have a different thickness from athickness of the second sensing electrode 3390. In an exemplaryembodiment, a thickness of the first sensing electrode 3370 may be about1000 Å, for example. When the thickness of the first sensing electrode3370 is about 1000 Å, transmissivity of the first sensing electrode 3370may be about 0%, and reflexibility of the first sensing electrode 3370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 3390 may be about 100 Å. When the thickness of thesecond sensing electrode 3390 is about 100 Å, transmissivity of thesecond sensing electrode 3390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 3390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 3390 mayperform a mirror function.

FIG. 99 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention. FIG. 100is a cross-sectional view taken along line VII-VII′ of FIG. 99.

An organic light emitting display device according to the illustratedexemplary embodiment is substantially same as the organic light emittingdisplay device of FIGS. 1 and 2 except for a first sensing electrode4370, a thin film encapsulation layer 4410, a fourth insulation layer4420 and second sensing electrode 4390 and thus similar referencenumerals are used for same elements and repetitive explanation will beomitted.

Referring to FIGS. 99 and 100, the thin film encapsulation layer 4410 isdisposed on a second electrode 4340. The thin film encapsulation layer4410 may be provided by stacking (e.g., sequentially stacking) a firstinorganic layer, an organic layer, and a second inorganic layer.

In an exemplary embodiment, the organic layer may include a polymer, andmay also be a single layer or multiple layers (e.g., stacked layers)that includes, for example, one of polyethylene terephthalate, apolyimide, a polycarbonate, an epoxy, a polyethylene and a polyacrylate.The organic layer may also include a polyacrylate, for example, theorganic layer may include a polymerized monomer composition including adiacrylate monomer or a triacrylate monomer. The monomer composition mayfurther include a monoacrylate monomer. In an exemplary embodiment, themonomer composition may further include a suitable photoinitiator suchas thermoplastic polyolefin (“TPO”), but is not limited thereto.

The first inorganic layer and the second inorganic layer may be singlelayers or stacked layers including a metal oxide or a metal nitride. Inan exemplary embodiment, the first inorganic layer and the secondinorganic layer may include one of silicon nitride (e.g., SiNx),aluminum oxide (e.g., Al2O3), silicon oxide (e.g., SiO2), and titaniumoxide (e.g., TiO2), for example. In this case, the second inorganiclayer may prevent or reduce moisture from permeating into thelight-emitting structure.

However, the invention is not limited thereto, and the thin filmencapsulation layer 4410 maybe provided by stacking (e.g., sequentiallystacking) a first inorganic layer, a first organic layer, a secondinorganic layer, a second organic layer and a third inorganic layer.

The second sensing electrode 4390 is disposed on the thin filmencapsulation layer 4410. The second sensing electrode 4390 may bedisposed in the light-emitting region II and the reflection region III.

The second sensing electrode 4390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 4390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 4390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode4390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

The fourth insulation layer 4420 is disposed on the second sensingelectrode 4390. The fourth insulation layer 4420 may includes anadhesive material.

The first sensing electrode 4370 is disposed on the fourth insulationlayer 4420. The first sensing electrode 4370 may be disposed in thereflection region III and outside of the light-emitting region II.

The first sensing electrode 4370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 4370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 4370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 4370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

A fifth insulation layer 4395 may be disposed on the first sensingelectrode 4370. In an exemplary embodiment, the fifth insulation layer4395 may include a silicon compound, a metal oxide, etc., for example.

In the illustrated exemplary embodiment, the second sensing electrode4390 is disposed on the thin film encapsulation layer 4410. The fourthinsulation layer 4420 is disposed on the second sensing electrode 4390,and the first sensing electrode 4370 is disposed on the fourthinsulation layer 4420. However, the invention is not limited thereto,and the first sensing electrode 4370 may be disposed on the thin filmencapsulation layer 4410. In addition, the fourth insulation layer 4420may be disposed on the first sensing electrode 4370, and the secondsensing electrode 4390 may be disposed on the fourth insulation layer4420.

FIGS. 101 to 108 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 100.

Referring to FIG. 100, the buffer layer 4115 is disposed on the firstsubstrate 4110. Thereafter, the active pattern 4130 and the firstinsulation layer 4150 are disposed on the buffer layer 4115.

In an exemplary embodiment, the first substrate 4110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example.

The light emitting structure may be disposed on the first substrate4110. The first substrate 4110 may include transparent materials. In anexemplary embodiment, the first substrate 4110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 4110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 4110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 4110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 4250, a capacitor, the first electrode 4290, thelight emitting layer 4330, the second electrode 4340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 4110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 4100 includes the light-emitting region II and thereflection region III, the first substrate 4110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 4115 may be disposed on the first substrate 4110. Thebuffer layer 4115 may extend from the light-emitting region II into thereflection region III. The buffer layer 4115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 4110. Additionally, the buffer layer 4115 may control a rateof a heat transfer in a crystallization process for forming the activepattern 4130, thereby obtaining substantially uniform the active pattern4130. Furthermore, the buffer layer 4115 may improve a surface flatnessof the first substrate 4110 when a surface of the first substrate 4110is relatively irregular. According to a type of the first substrate4110, at least two buffer layers may be provided on the first substrate4110, or the buffer layer may not be disposed.

In an exemplary embodiment, the active pattern 4130 may include an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon,polysilicon, etc.), an organic semiconductor, etc., for example.

The first insulation layer 4150 may be disposed on the active pattern4130. The first insulation layer 4150 may cover the active pattern 4130in the light-emitting region II, and may extend in the first directionon the first substrate 4110. That is, the first insulation layer 4150may be disposed on the entire surface of the first substrate 4110. In anexemplary embodiment, the first insulation layer 4150 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 102, the gate electrode 4170 and the second insulationlayer 4190 are disposed on the first substrate 4110 on which the firstinsulation layer 4150 is disposed.

The gate electrode 4170 may be disposed on a portion of the firstinsulation layer 4150 under which the active pattern 4130 is disposed.In an exemplary embodiment, the gate electrode 4170 may include a metal,an alloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 4190 may be disposed on the gate electrode4170. The second insulation layer 4190 may cover the gate electrode 4170in the light-emitting region II, and may extend in the first directionon the first substrate 4110. That is, the second insulation layer 4190may be disposed on the entire surface of the first substrate 4110. In anexemplary embodiment, the second insulation layer 4190 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 103, the source electrode 4210 and the drain electrode4230 are disposed on the first substrate 4110 on which the secondinsulation layer 4190 is disposed.

The source electrode 4210 and the drain electrode 4230 may be disposedon the second insulation layer 4190. The source electrode 4210 may be incontact with a first side of the active layer 4130 by removing a portionof the first and second insulation layers 4150 and 4190. The drainelectrode 4230 may be in contact with a second side of the active layer4130 by removing a second portion of the first and second insulationlayers 4150 and 4190. In an exemplary embodiment, each of the sourceelectrode 4210 and the drain electrode 4230 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

In the illustrated exemplary embodiment, the gate electrode 4170 isdisposed on the active pattern 4130. However, the invention is notlimited thereto, and the gate electrode 4170 may be disposed under theactive pattern 4130.

Referring to FIG. 104, the third insulation layer 4270 and the firstelectrode 4290 are disposed on the first substrate 4110 on which thesource electrode 4210 and the drain electrode 4230 are disposed.

The third insulation layer 4270 may be disposed on the source electrode4210 and the drain electrode 4230. The third insulation layer 4270 maycover the source electrode 4210 and the drain electrode 4230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 4110. That is, the third insulation layer 4270 may be disposedon the entire surface of the first substrate 4110. In an exemplaryembodiment, the third insulation layer 4270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 4290 may be disposed on the third insulation layer4270. The first electrode 4290 may be in contact with the sourceelectrode 4210 by removing a portion of the third insulation layer 4270.In addition, the first electrode 4290 may be electrically connected tothe semiconductor element 4250. In an exemplary embodiment, the firstelectrode 4290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

Referring to FIG. 105, the pixel defining layer 4310, the light emittinglayer 4330 and the second electrode 4340 are disposed on the firstsubstrate 4110 on which the first electrode 4290 is disposed.

The pixel defining layer 4310 may be disposed the on third insulationlayer 4270 to expose a portion of the first electrode 4290. The pixeldefining layer 4310 may include organic materials or inorganicmaterials. In this case, the light emitting layer 4330 may be disposedon a portion that the first electrode 4290 is exposed by the pixeldefining layer 4310.

The light emitting layer 4330 may be disposed on the exposed firstelectrode 4290. The light emitting layer 4330 may be provided usinglight emitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 4330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 4340 may be disposed on the pixel defining layer4310 and the light emitting layer 4330. The second electrode 4340 maycover the pixel defining layer 4310 and the light emitting layer 4330 inthe light-emitting region II and the reflection region III, and mayextend in the first direction on the first substrate 4110. That is, thesecond electrode 4340 may be electrically connected to the first throughthird pixels. In an exemplary embodiment, the second electrode 4340 mayinclude a metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc., for example. These may be usedalone or in a combination thereof.

Referring to FIG. 106, the thin film encapsulation layer 4410 isdisposed on the first substrate 4110 on which the second electrode 4340is disposed.

The thin film encapsulation layer 4410 may be provided by stacking(e.g., sequentially stacking) a first inorganic layer, an organic layer,and a second inorganic layer.

In an exemplary embodiment, the organic layer may include a polymer, andmay also be a single layer or multiple layers (e.g., stacked layers)that includes, for example, one of polyethylene terephthalate, apolyimide, a polycarbonate, an epoxy, a polyethylene and a polyacrylate.The organic layer may also include a polyacrylate, for example, theorganic layer may include a polymerized monomer composition including adiacrylate monomer or a triacrylate monomer. The monomer composition mayfurther include a monoacrylate monomer. The monomer composition mayfurther include a suitable photoinitiator such as TPO, but is notlimited thereto.

The first inorganic layer and the second inorganic layer may be singlelayers or stacked layers including a metal oxide or a metal nitride. Inan exemplary embodiment, the first inorganic layer and the secondinorganic layer may include one of silicon nitride (e.g., SiNx),aluminum oxide (e.g., Al2O3), silicon oxide (e.g., SiO2), and titaniumoxide (e.g., TiO2), for example. In this case, the second inorganiclayer may prevent or reduce moisture from permeating into thelight-emitting structure.

Referring to FIG. 107, the second sensing electrode 4390 is disposed onthe first substrate 4110 on which the thin film encapsulation layer 4410is disposed.

The second sensing electrode 4390 may be disposed in the light-emittingregion II and the reflection region III.

The second sensing electrode 4390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 4390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 4390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode4390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

Referring to FIG. 108, the fourth insulation layer 4420 is disposed onthe first substrate 4110 on which the second sensing electrode 4390 isdisposed.

The fourth insulation layer 4420 may prevent from oxidation of thesecond sensing electrode 4390. The fourth insulation layer 4420 mayinclude an adhesive material. The fourth insulation layer 4420 mayinsulate between the first sensing electrode 4370 and the second sensingelectrode 4390.

Referring to FIG. 100, the first sensing electrode 4370 is disposed onthe first substrate 4110 on which the fourth insulation layer 4420 isdisposed. The fifth insulation layer 4395 is disposed on the firstsensing electrode 4370.

The first sensing electrode 4370 may be disposed in the reflectionregion III and outside of the light-emitting region II.

The first sensing electrode 4370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 4370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 4370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 4370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

FIG. 109 is a plan view illustrating a first sensing electrode of FIG.100. FIG. 110 is a plan view illustrating a second sensing electrode ofFIG. 100. FIG. 111 is a plan view illustrating the first sensingelectrode of FIG. 109 and the second sensing electrode of FIG. 110.

Referring to FIGS. 100 and 109 to 111, a first sensing electrode 4370and a second sensing electrode 4390 are illustrated.

The first sensing electrode 4370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode4370 is disposed in the reflection region III. The first sensingelectrode 4370 may be connected to a sensing driving part through afirst connecting line 4375. The first connecting line 4375 may includethe same material as that of the first sensing electrode 4370. The firstconnecting line 4375 may be disposed on the same layer as that on whichthe first sensing electrode 4370 is disposed.

The second sensing electrode 4390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. The second sensing electrode 4390 is disposed in the light-emittingregion II and the reflection region III. The second sensing electrode4390 may be connected to a sensing driving part through a secondconnecting line 4395. The second connecting line 4395 may include thesame material as that of the second sensing electrode 4390. The secondconnecting line 4395 may be disposed on the same layer as that on whichthe second sensing electrode 4390 is disposed.

The first sensing electrode 4370 may include a material having apredetermined reflectivity. The second sensing electrode 4390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 4370 may partially overlap the second sensingelectrode 4390.

The second sensing electrode 4390 is disposed on the thin filmencapsulation layer 4410. The fourth insulation layer 4420 is disposedon the second sensing electrode 4390, and the first sensing electrode4370 is disposed on the fourth insulation layer 4420.

The first sensing electrode 4370 and second sensing electrode 4390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 4370 and second sensing electrode 4390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 4370 may have a different thickness from athickness of the second sensing electrode 4390. In an exemplaryembodiment, a thickness of the first sensing electrode 4370 may be about1000 Å, for example. When the thickness of the first sensing electrode4370 is about 1000 Å, transmissivity of the first sensing electrode 4370may be about 0%, and reflexibility of the first sensing electrode 4370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 4390 may be about 100 Å. When the thickness of thesecond sensing electrode 4390 is about 100 Å, transmissivity of thesecond sensing electrode 4390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 4390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 4390 mayperform a mirror function.

FIG. 112 is a plan view illustrating a first sensing electrode of FIG.100. FIG. 113 is a plan view illustrating a second sensing electrode ofFIG. 100. FIG. 114 is a plan view illustrating the first sensingelectrode of FIG. 112 and the second sensing electrode of FIG. 113.

Referring to FIGS. 100 and 112 to 114, a first sensing electrode 4370and a second sensing electrode 4390 are illustrated.

The first sensing electrode 4370 may include a plurality of firstsensing patterns 4371 extending in a second direction D2 and a pluralityof first dummy patterns 4373 disposed between the first sensing patterns4371. The first sensing electrode 4370 is disposed in the reflectionregion III. An interval of the first sensing patterns 4371 may beadjusted according to the number of the first dummy patterns 4373. Thefirst sensing electrode 4370 may be connected to a sensing driving partthrough a first connecting line 4375. The first connecting line 4375 mayinclude the same material as that of the first sensing electrode 4370.The first connecting line 4375 may be disposed on the same layer as thaton which the first sensing electrode 4370 is disposed.

The second sensing electrode 4390 may be provided as a plurality ofsecond sensing patterns 4391 extending in a first direction D1 crossingthe second direction D2 and a plurality of second dummy patterns 4393disposed between the second sensing patterns 4391. The second sensingelectrode 4390 is disposed in the light-emitting region II and thereflection region III. An interval of the second sensing electrode 4390may be adjusted according to the number of the second dummy patterns4393. The second sensing electrode 4390 may be connected to a sensingdriving part through a second connecting line 4395. The secondconnecting line 4395 may include the same material as that of the secondsensing electrode 4390. The second connecting line 4395 may be disposedon the same layer as that on which the second sensing electrode 4390 isdisposed.

The first sensing electrode 4370 may include a material having apredetermined reflectivity. The second sensing electrode 4390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 4370 may partially overlap the second sensingelectrode 4390.

The second sensing electrode 4390 is disposed on the thin filmencapsulation layer 4410. The fourth insulation layer 4420 is disposedon the second sensing electrode 4390, and the first sensing electrode4370 is disposed on the fourth insulation layer 4420.

The first sensing electrode 4370 and second sensing electrode 4390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 4370 and second sensing electrode 4390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 4370 may have a different thickness from athickness of the second sensing electrode 4390. In an exemplaryembodiment, a thickness of the first sensing electrode 4370 may be about1000 Å, for example. When the thickness of the first sensing electrode4370 is about 1000 Å, transmissivity of the first sensing electrode 4370may be about 0%, and reflexibility of the first sensing electrode 4370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 4390 may be about 100 Å. When the thickness of thesecond sensing electrode 4390 is about 100 Å, transmissivity of thesecond sensing electrode 4390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 4390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 4390 mayperform a mirror function.

FIG. 115 is a plan view illustrating a first sensing electrode of FIG.100. FIG. 116 is a plan view illustrating a second sensing electrode ofFIG. 100. FIG. 117 is a plan view illustrating the first sensingelectrode of FIG. 115 and the second sensing electrode of FIG. 116.

Referring to FIGS. 100 and 115 to 117, a first sensing electrode 4370and a second sensing electrode 4390 are illustrated.

The first sensing electrode 4370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode4370 may be provided as a mesh shape. The first sensing electrode 4370is disposed in the reflection region III. The first sensing electrode4370 may be connected to a sensing driving part through a firstconnecting line 4375. The first connecting line 4375 may include thesame material as that of the first sensing electrode 4370. The firstconnecting line 4375 may be disposed on the same layer as that on whichthe first sensing electrode 4370 is disposed.

The second sensing electrode 4390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. A width of the second sensing electrode 4390 in the second directionD2 is the same as a width of the first sensing electrode 4370 in thefirst direction D1. The second sensing electrode 4390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 4390 may be connected to a sensing driving partthrough a second connecting line 4395. The second connecting line 4395may include the same material as that of the second sensing electrode4390. The second connecting line 4395 may be disposed on the same layeras that on which the second sensing electrode 4390 is disposed.

The first sensing electrode 4370 may include a material having apredetermined reflectivity. The second sensing electrode 4390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 4370 may partially overlap the second sensingelectrode 4390.

The second sensing electrode 4390 is disposed on the thin filmencapsulation layer 4410. The fourth insulation layer 4420 is disposedon the second sensing electrode 4390, and the first sensing electrode4370 is disposed on the fourth insulation layer 4420.

The first sensing electrode 4370 and second sensing electrode 4390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 4370 and second sensing electrode 4390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 4370 may have a different thickness from athickness of the second sensing electrode 4390. In an exemplaryembodiment, a thickness of the first sensing electrode 4370 may be about1000 Å, for example. When the thickness of the first sensing electrode4370 is about 1000 Å, transmissivity of the first sensing electrode 4370may be about 0%, and reflexibility of the first sensing electrode 4370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 4390 may be about 100 Å. When the thickness of thesecond sensing electrode 4390 is about 100 Å, transmissivity of thesecond sensing electrode 4390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 4390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 4390 mayperform a mirror function.

FIG. 118 is a plan view illustrating a first sensing electrode of FIG.100. FIG. 119 is a plan view magnifying ‘M’ portion of FIG. 118. FIG.120 is a plan view illustrating a second sensing electrode of FIG. 100.FIG. 121 is a plan view magnifying ‘N’ portion of FIG. 120. FIG. 122 isa plan view illustrating the first sensing electrode of FIG. 118 and thesecond sensing electrode of FIG. 120. FIG. 123 is a plan view magnifying‘O’ portion of FIG. 122.

Referring to FIGS. 100 and 118 to 123, a first sensing electrode 4370and a second sensing electrode 4390 are illustrated.

The first sensing electrode 4370 may include plurality of first sensingpatterns 4371 having a rhombus shape and sequentially connected eachother in a first direction D1 and a plurality of first dummy patterns4373 having a rhombus shape and disposed between the first sensingpatterns 4371. The first dummy patterns 4373 are spaced apart from eachother. The first sensing electrode 4370 is disposed in the reflectionregion III. The first sensing electrode 4370 may be connected to asensing driving part through a first connecting line 4375. The firstconnecting line 4375 may include the same material as that of the firstsensing electrode 4370. The first connecting line 4375 may be disposedon the same layer as that on which the first sensing electrode 4370 isdisposed.

The second sensing electrode 4390 may include plurality of secondsensing patterns 4391 having a rhombus shape and sequentially connectedeach other in a second direction D2 and a plurality of second dummypatterns 4393 having a rhombus shape and disposed between the secondsensing patterns 4391. The second dummy patterns 4393 are spaced apartfrom each other. The second sensing electrode 4390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 4390 may be connected to a sensing driving partthrough a second connecting line 4395. The second connecting line 4395may include the same material as that of the second sensing electrode4390. The second connecting line 4395 may be disposed on the same layeras that on which the second sensing electrode 4390 is disposed.

The first sensing electrode 4370 may include a material having apredetermined reflectivity. The second sensing electrode 4390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 4370 may partially overlap the second sensingelectrode 4390.

The second sensing electrode 4390 is disposed on the thin filmencapsulation layer 4410. The fourth insulation layer 4420 is disposedon the second sensing electrode 4390, and the first sensing electrode4370 is disposed on the fourth insulation layer 4420.

The first sensing electrode 4370 and second sensing electrode 4390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 4370 and second sensing electrode 4390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 4370 may have a different thickness from athickness of the second sensing electrode 4390. In an exemplaryembodiment, a thickness of the first sensing electrode 4370 may be about1000 Å, for example. When the thickness of the first sensing electrode4370 is about 1000 Å, transmissivity of the first sensing electrode 4370may be about 0%, and reflexibility of the first sensing electrode 4370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 4390 may be about 100 Å. When the thickness of thesecond sensing electrode 4390 is about 100 Å, transmissivity of thesecond sensing electrode 4390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 4390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 4390 mayperform a mirror function.

FIG. 124 is a plan view illustrating an organic light emitting displaydevice according to an exemplary embodiment of the invention. FIG. 125is a cross-sectional view taken along line VIII-VIII′ of FIG. 124.

An organic light emitting display device according to the illustratedexemplary embodiment is substantially same as the organic light emittingdisplay device of FIGS. 1 and 2 except for a first sensing electrode5370, a first thin film encapsulation layer 5410, a second thin filmencapsulation layer 5420 and second sensing electrode 5390 and thussimilar reference numerals are used for same elements and repetitiveexplanation will be omitted.

Referring to FIGS. 124 and 125, a thin film encapsulation layer isdisposed on a second electrode 5340. The thin film encapsulation layermay be provided by stacking (e.g., sequentially stacking) a firstinorganic layer, an organic layer, and a second inorganic layer.

In an exemplary embodiment, the organic layer may include a polymer, andmay also be a single layer or multiple layers (e.g., stacked layers)that includes, for example, one of polyethylene terephthalate, apolyimide, a polycarbonate, an epoxy, a polyethylene and a polyacrylate.The organic layer may also include a polyacrylate, for example, theorganic layer may include a polymerized monomer composition including adiacrylate monomer or a triacrylate monomer. The monomer composition mayfurther include a monoacrylate monomer. The monomer composition mayfurther include a suitable photoinitiator such as TPO, but is notlimited thereto.

The first inorganic layer and the second inorganic layer may be singlelayers or stacked layers including a metal oxide or a metal nitride. Inan exemplary embodiment, the first inorganic layer and the secondinorganic layer may include one of silicon nitride (e.g., SiNx),aluminum oxide (e.g., Al2O3), silicon oxide (e.g., SiO2), and titaniumoxide (e.g., TiO2), for example. In this case, the second inorganiclayer may prevent or reduce moisture from permeating into thelight-emitting structure.

However, the invention is not limited thereto, and the thin filmencapsulation layer maybe provided by stacking (e.g., sequentiallystacking) a first inorganic layer, a first organic layer, a secondinorganic layer, a second organic layer and a third inorganic layer.

In the illustrated exemplary embodiment, the thin film encapsulationlayer may include a first thin film encapsulation layer 5410 and asecond thin film encapsulation layer 5420. In an exemplary embodiment,the first thin film encapsulation layer 5410 may include a firstinorganic layer and an organic layer, for example. The second thin filmencapsulation layer 5420 may include second inorganic layer. However,the invention is not limited thereto.

The second sensing electrode 5390 is disposed on the first thin filmencapsulation layer 5410. The second sensing electrode 5390 may bedisposed in the light-emitting region II and the reflection region III.

The second sensing electrode 5390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 5390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 5390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode5390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc.

The second thin film encapsulation layer 5420 is disposed on the secondsensing electrode 5390. The first sensing electrode 5370 is disposed onthe second thin film encapsulation layer 5420. The first sensingelectrode 5370 may be disposed in the reflection region III and outsideof the light-emitting region II.

The first sensing electrode 5370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 5370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 5370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 5370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

A fifth insulation layer 5395 may be disposed on the first sensingelectrode 5370. In an exemplary embodiment, the fifth insulation layer5395 may include a silicon compound, a metal oxide, etc., for example.

In the illustrated exemplary embodiment, the second sensing electrode5390 is disposed on the first thin film encapsulation layer 5410. Thesecond thin film encapsulation layer 5420 is disposed on the secondsensing electrode 5390, and the first sensing electrode 5370 is disposedon the second thin film encapsulation layer 5420. However, the inventionis not limited thereto, and the first sensing electrode 5370 may bedisposed on the first thin film encapsulation layer 5410. In addition,the second thin film encapsulation layer 5420 may be disposed on thefirst sensing electrode 5370, and the second sensing electrode 5390 maybe disposed on the second thin film encapsulation layer 5420.

FIGS. 126 to 133 are cross-sectional views illustrating a method ofmanufacturing the organic light emitting display device of FIG. 125.

Referring to FIG. 126, the buffer layer 5115 is disposed on the firstsubstrate 5110. Thereafter, the active pattern 5130 and the firstinsulation layer 5150 are disposed on the buffer layer 5115.

In an exemplary embodiment, the first substrate 5110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example.

The light emitting structure may be disposed on the first substrate5110. The first substrate 5110 may include transparent materials. In anexemplary embodiment, the first substrate 5110 may include quartz,synthetic quartz, calcium fluoride, fluoride-doping quartz, a sodalimeglass, a non-alkali glass etc., for example. In an alternative exemplaryembodiment, the first substrate 5110 may include a flexible transparentresin substrate. Here, the flexible transparent resin substrate for thefirst substrate 5110 may include a polyimide substrate. In an exemplaryembodiment, the polyimide substrate may include a first polyimide layer,a barrier film layer, a second polyimide layer, etc., for example. Whenthe polyimide substrate is thin and flexible, the polyimide substratemay be disposed on a rigid glass substrate to help support the formationof the light emitting structure. That is, in exemplary embodiments, thefirst substrate 5110 may have a structure in which the first polyimidelayer, the barrier film layer and the second polyimide layer are stackedon a glass substrate. Here, after an insulation layer is provided on thesecond polyimide layer, the light emitting structure (e.g., thesemiconductor element 5250, a capacitor, the first electrode 5290, thelight emitting layer 5330, the second electrode 5340, etc.) may bedisposed on the insulation layer.

After the light emitting structure is disposed on the insulation layer,the glass substrate may be removed. It may be difficult that the lightemitting structure is directly disposed on the polyimide substratebecause the polyimide substrate is thin and flexible. Accordingly, thelight emitting structure is disposed on a rigid glass substrate, andthen the polyimide substrate may serve as the first substrate 5110 afterthe removal of the glass substrate. As the organic light emittingdisplay device 5100 includes the light-emitting region II and thereflection region III, the first substrate 5110 may also include thelight-emitting region II and the reflection region III.

A buffer layer 5115 may be disposed on the first substrate 5110. Thebuffer layer 5115 may extend from the light-emitting region II into thereflection region III. The buffer layer 5115 may prevent the diffusion(e.g., an out gassing) of metal atoms and/or impurities from the firstsubstrate 110. Additionally, the buffer layer 5115 may control a rate ofa heat transfer in a crystallization process for forming the activepattern 5130, thereby obtaining substantially uniform the active pattern5130. Furthermore, the buffer layer 5115 may improve a surface flatnessof the first substrate 5110 when a surface of the first substrate 5110is relatively irregular. According to a type of the first substrate5110, at least two buffer layers may be provided on the first substrate5110, or the buffer layer may not be disposed.

In an exemplary embodiment, the active pattern 5130 may include an oxidesemiconductor, an inorganic semiconductor (e.g., amorphous silicon,polysilicon, etc.), an organic semiconductor, etc., for example.

The first insulation layer 5150 may be disposed on the active pattern5130. The first insulation layer 5150 may cover the active pattern 5130in the light-emitting region II, and may extend in the first directionon the first substrate 5110. That is, the first insulation layer 5150may be disposed on the entire surface of the first substrate 5110. In anexemplary embodiment, the first insulation layer 5150 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 127, the gate electrode 5170 and the second insulationlayer 5190 are disposed on the first substrate 5110 on which the firstinsulation layer 5150 is disposed.

The gate electrode 5170 may be disposed on a portion of the firstinsulation layer 150 under which the active pattern 5130 is disposed. Inan exemplary embodiment, the gate electrode 5170 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

The second insulation layer 5190 may be disposed on the gate electrode5170. The second insulation layer 5190 may cover the gate electrode 5170in the light-emitting region II, and may extend in the first directionon the first substrate 5110. That is, the second insulation layer 5190may be disposed on the entire surface of the first substrate 5110. In anexemplary embodiment, the second insulation layer 5190 may include asilicon compound, a metal oxide, etc., for example.

Referring to FIG. 128, the source electrode 5210 and the drain electrode5230 are disposed on the first substrate 5110 on which the secondinsulation layer 5190 is disposed.

The source electrode 5210 and the drain electrode 5230 may be disposedon the second insulation layer 5190. The source electrode 5210 may be incontact with a first side of the active layer 5130 by removing a portionof the first and second insulation layers 5150 and 5190. The drainelectrode 5230 may be in contact with a second side of the active layer5130 by removing a second portion of the first and second insulationlayers 5150 and 5190. In an exemplary embodiment, each of the sourceelectrode 5210 and the drain electrode 5230 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc., for example.

In the illustrated exemplary embodiment, the gate electrode 5170 isdisposed on the active pattern 5130. However, the invention is notlimited thereto, and the gate electrode 5170 may be disposed under theactive pattern 5130.

Referring to FIG. 129, the third insulation layer 5270 and the firstelectrode 5290 are disposed on the first substrate 5110 on which thesource electrode 5210 and the drain electrode 5230 are disposed.

The third insulation layer 5270 may be disposed on the source electrode5210 and the drain electrode 5230. The third insulation layer 5270 maycover the source electrode 5210 and the drain electrode 5230 in thesub-pixel region II, and may extend in the first direction on the firstsubstrate 5110. That is, the third insulation layer 5270 may be disposedon the entire surface of the first substrate 5110. In an exemplaryembodiment, the third insulation layer 5270 may include a siliconcompound, a metal oxide, etc., for example.

The first electrode 5290 may be disposed on the third insulation layer5270. The first electrode 5290 may be in contact with the sourceelectrode 5210 by removing a portion of the third insulation layer 5270.In addition, the first electrode 5290 may be electrically connected tothe semiconductor element 5250. In an exemplary embodiment, the firstelectrode 5290 may include a metal, an alloy, metal nitride, conductivemetal oxide, transparent conductive materials, etc., for example.

Referring to FIG. 130, the pixel defining layer 5310, the light emittinglayer 5330 and the second electrode 5340 are disposed on the firstsubstrate 5110 on which the first electrode 5290 is disposed.

The pixel defining layer 5310 may be disposed the on third insulationlayer 5270 to expose a portion of the first electrode 5290. The pixeldefining layer 5310 may include organic materials or inorganicmaterials. In this case, the light emitting layer 5330 may be disposedon a portion that the first electrode 5290 is exposed by the pixeldefining layer 5310.

The light emitting layer 5330 may be disposed on the exposed firstelectrode 5290. The light emitting layer 5330 may be provided usinglight emitting materials capable of generating different colors of light(e.g., a red color of light, a blue color of light, and a green color oflight). However, the invention is not limited thereto, and the lightemitting layer 5330 may stack light emitting materials capable ofgenerating different colors of light to emit white color of light.

The second electrode 5340 may be disposed on the pixel defining layer5310 and the light emitting layer 5330. The second electrode 5340 maycover the pixel defining layer 5310 and the light emitting layer 5330 inthe light-emitting region II and the reflection region III, and mayextend in the first direction on the first substrate 5110. That is, thesecond electrode 5340 may be electrically connected to the first throughthird pixels. In an exemplary embodiment, the second electrode 5340 mayinclude a metal, an alloy, metal nitride, conductive metal oxide, atransparent conductive material, etc., for example. These may be usedalone or in a combination thereof.

Referring to FIG. 131, the first thin film encapsulation layer 5410 isdisposed on the first substrate 5110 on which the second electrode 5340is disposed.

A thin film encapsulation layer according to the illustrated exemplaryembodiment may includes a first thin film encapsulation layer 5410 and asecond thin film encapsulation layer 5420. The thin film encapsulationlayer may be provided by stacking (e.g., sequentially stacking) a firstinorganic layer, an organic layer, and a second inorganic layer.

In an exemplary embodiment, the organic layer may include a polymer, andmay also be a single layer or multiple layers (e.g., stacked layers)that includes, for example, one of polyethylene terephthalate, apolyimide, a polycarbonate, an epoxy, a polyethylene and a polyacrylate.The organic layer may also include a polyacrylate, for example, theorganic layer may include a polymerized monomer composition including adiacrylate monomer or a triacrylate monomer. The monomer composition mayfurther include a monoacrylate monomer. The monomer composition mayfurther include a suitable photoinitiator such as TPO, but is notlimited thereto.

The first inorganic layer and the second inorganic layer may be singlelayers or stacked layers including a metal oxide or a metal nitride. Inan exemplary embodiment, the first inorganic layer and the secondinorganic layer may include one of silicon nitride (e.g., SiNx),aluminum oxide (e.g., Al2O3), silicon oxide (e.g., SiO2), and titaniumoxide (e.g., TiO2), for example. In this case, the second inorganiclayer may prevent or reduce moisture from permeating into thelight-emitting structure.

The first thin film encapsulation layer 5410 may include a firstinorganic layer. However, the invention is not limited thereto, and thefirst thin film encapsulation layer 5410 may include a first inorganiclayer and an organic layer.

Referring to FIG. 132, the second sensing electrode 5390 is disposed onthe first substrate 5110 on which the first thin film encapsulationlayer 5410 is disposed.

The second sensing electrode 5390 may be disposed in the light-emittingregion II and the reflection region III.

The second sensing electrode 5390 may include a material having apredetermined reflectivity. In an exemplary embodiment, the secondsensing electrode 5390 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the second sensingelectrode 5390 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the second sensing electrode5390 may include an alloy including aluminum, aluminum nitride (AlNx),an alloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

Referring to FIG. 133, the second thin film encapsulation layer 5420 isdisposed on the first substrate 5110 on which the second sensingelectrode 5390 is disposed.

The second thin film encapsulation layer 5420 may include a secondinorganic layer. However, the invention is not limited thereto, and thesecond thin film encapsulation layer 5420 may include an organic layerand a second inorganic layer.

In the illustrated exemplary embodiment, the thin film encapsulationlayer may include a first thin film encapsulation layer 5410 and asecond thin film encapsulation layer 5420. The second sensing electrode5390 is disposed between the first thin film encapsulation layer 5410and the second thin film encapsulation layer 5420. That is, the secondsensing electrode 5390 is disposed between thin film encapsulationlayers.

Referring to FIG. 125, the first sensing electrode 5370 is disposed onthe first substrate 5110 on which the second thin film encapsulationlayer 5420 is disposed. The fifth insulation layer 4595 is disposed onthe first sensing electrode 4370.

The first sensing electrode 5370 may be disposed in the reflectionregion III and outside of the light-emitting region II.

The first sensing electrode 5370 may include a material having apredetermined reflectivity. In an exemplary embodiment, the firstsensing electrode 5370 may include gold (Au), silver (Ag), aluminum(Al), magnesium (Mg), platinum (Pt), Nickel (Ni), titanium (Ti), etc.,for example. In an alternative exemplary embodiment, the first sensingelectrode 5370 may include an alloy, metal nitride, conductive metaloxide, etc. In an exemplary embodiment, the first sensing electrode 5370may include an alloy including aluminum, aluminum nitride (AlNx), analloy including silver, tungsten nitride (WNx), an alloy includingcopper, chrome nitride (CrNx), an alloy including molybdenum, titaniumnitride (TiNx), tantalum nitride (TaNx), SRO, zinc oxide (ZnOx), stannumoxide (SnOx), indium oxide (InOx), gallium oxide (GaOx), etc., forexample.

FIG. 134 is a plan view illustrating a first sensing electrode of FIG.125. FIG. 135 is a plan view illustrating a second sensing electrode ofFIG. 125. FIG. 136 is a plan view illustrating the first sensingelectrode of FIG. 134 and the second sensing electrode of FIG. 135.

Referring to FIGS. 125 and 134 to 136, a first sensing electrode 5370and a second sensing electrode 5390 are illustrated.

The first sensing electrode 5370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode5370 is disposed in the reflection region III. The first sensingelectrode 5370 may be connected to a sensing driving part through afirst connecting line 5375. The first connecting line 5375 may includethe same material as that of the first sensing electrode 5370. The firstconnecting line 5375 may be disposed on the same layer as that on whichthe first sensing electrode 5370 is disposed.

The second sensing electrode 5390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. The second sensing electrode 5390 is disposed in the light-emittingregion II and the reflection region III. The second sensing electrode5390 may be connected to a sensing driving part through a secondconnecting line 5395. The second connecting line 5395 may include thesame material as that of the second sensing electrode 5390. The secondconnecting line 5395 may be disposed on the same layer as that on whichthe second sensing electrode 5390 is disposed.

The first sensing electrode 5370 may include a material having apredetermined reflectivity. The second sensing electrode 5390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 5370 may partially overlap the second sensingelectrode 5390.

The second sensing electrode 5390 is disposed on the first thin filmencapsulation layer 5410. The second thin film encapsulation layer 5420is disposed on the second sensing electrode 5390. The first sensingelectrode 5370 is disposed on the second thin film encapsulation layer5420.

The first sensing electrode 5370 and second sensing electrode 5390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 5370 and second sensing electrode 5390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 5370 may have a different thickness from athickness of the second sensing electrode 5390. In an exemplaryembodiment, a thickness of the first sensing electrode 5370 may be about1000 Å, for example. When the thickness of the first sensing electrode5370 is about 1000 Å, transmissivity of the first sensing electrode 5370may be about 0%, and reflexibility of the first sensing electrode 5370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 5390 may be about 100 Å. When the thickness of thesecond sensing electrode 5390 is about 100 Å, transmissivity of thesecond sensing electrode 5390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the light is emitted through the second electrode 390 in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 5390 mayperform a mirror function.

FIG. 137 is a plan view illustrating a first sensing electrode of FIG.125. FIG. 138 is a plan view illustrating a second sensing electrode ofFIG. 125. FIG. 139 is a plan view illustrating the first sensingelectrode of FIG. 137 and the second sensing electrode of FIG. 138.

Referring to FIGS. 125 and 137 to 139, a first sensing electrode 5370and a second sensing electrode 5390 are illustrated.

The first sensing electrode 5370 may include a plurality of firstsensing patterns 5371 extending in a second direction D2 and a pluralityof first dummy patterns 5373 disposed between the first sensing patterns5371. The first sensing electrode 5370 is disposed in the reflectionregion III. An interval of the first sensing patterns 5371 may beadjusted according to the number of the first dummy patterns 5373. Thefirst sensing electrode 5370 may be connected to a sensing driving partthrough a first connecting line 5375. The first connecting line 5375 mayinclude the same material as that of the first sensing electrode 5370.The first connecting line 5375 may be disposed on the same layer as thaton which the first sensing electrode 5370 is disposed.

The second sensing electrode 5390 may be provided as a plurality ofsecond sensing patterns 5391 extending in a first direction D1 crossingthe second direction D2 and a plurality of second dummy patterns 5393disposed between the second sensing patterns 5391. The second sensingelectrode 5390 is disposed in the light-emitting region II and thereflection region III. An interval of the second sensing electrode 5390may be adjusted according to the number of the second dummy patterns5393. The second sensing electrode 5390 may be connected to a sensingdriving part through a second connecting line 5395. The secondconnecting line 5395 may include the same material as that of the secondsensing electrode 5390. The second connecting line 5395 may be disposedon the same layer as that on which the second sensing electrode 5390 isdisposed.

The first sensing electrode 5370 may include a material having apredetermined reflectivity. The second sensing electrode 5390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 5370 may partially overlap the second sensingelectrode 5390.

The second sensing electrode 5390 is disposed on the first thin filmencapsulation layer 5410. The second thin film encapsulation layer 5420is disposed on the second sensing electrode 5390. The first sensingelectrode 5370 is disposed on the second thin film encapsulation layer5420.

The first sensing electrode 5370 and second sensing electrode 5390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 5370 and second sensing electrode 5390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 5370 may have a different thickness from athickness of the second sensing electrode 5390. In an exemplaryembodiment, a thickness of the first sensing electrode 5370 may be about1000 Å, for example. When the thickness of the first sensing electrode5370 is about 1000 Å, transmissivity of the first sensing electrode 5370may be about 0%, and reflexibility of the first sensing electrode 5370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 5390 may be about 100 Å. When the thickness of thesecond sensing electrode 5390 is 100 Å, transmissivity of the secondsensing electrode 5390 may be greater than about 50% and less than about95%. When an organic light emitting display device emits light, thelight is emitted through the second electrode 390 in the light-emittingregion II, and when an organic light emitting display device does notemits light, the second sensing electrode 5390 may perform a mirrorfunction.

FIG. 140 is a plan view illustrating a first sensing electrode of FIG.125. FIG. 141 is a plan view illustrating a second sensing electrode ofFIG. 125. FIG. 142 is a plan view illustrating the first sensingelectrode of FIG. 140 and the second sensing electrode of FIG. 141.

Referring to FIGS. 125 and 140 to 142, a first sensing electrode 5370and a second sensing electrode 5390 are illustrated.

The first sensing electrode 5370 may be provided as a plurality ofpatterns extending in a second direction D2. The first sensing electrode5370 may be provided as a mesh shape. The first sensing electrode 5370is disposed in the reflection region III. The first sensing electrode5370 may be connected to a sensing driving part through a firstconnecting line 5375. The first connecting line 5375 may include thesame material as that of the first sensing electrode 5370. The firstconnecting line 5375 may be disposed on the same layer as that on whichthe first sensing electrode 5370 is disposed.

The second sensing electrode 5390 may be provided as a plurality ofpatterns extending in a first direction D1 crossing the second directionD2. A width of the second sensing electrode 5390 in the second directionD2 is the same as a width of the first sensing electrode 5370 in thefirst direction D1. The second sensing electrode 5390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 5390 may be connected to a sensing driving partthrough a second connecting line 5395. The second connecting line 5395may include the same material as that of the second sensing electrode5390. The second connecting line 5395 may be disposed on the same layeras that on which the second sensing electrode 5390 is disposed.

The first sensing electrode 5370 may include a material having apredetermined reflectivity. The second sensing electrode 5390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 5370 may partially overlap the second sensingelectrode 5390.

The second sensing electrode 5390 is disposed on the first thin filmencapsulation layer 5410. The second thin film encapsulation layer 5420is disposed on the second sensing electrode 5390. The first sensingelectrode 5370 is disposed on the second thin film encapsulation layer5420.

The first sensing electrode 5370 and second sensing electrode 5390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 5370 and second sensing electrode 5390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 5370 may have a different thickness from athickness of the second sensing electrode 5390. In an exemplaryembodiment, a thickness of the first sensing electrode 5370 may be about1000 Å, for example. When the thickness of the first sensing electrode5370 is about 1000 Å, transmissivity of the first sensing electrode 5370may be about 0%, and reflexibility of the first sensing electrode 5370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 5390 may be about 100 Å. When the thickness of thesecond sensing electrode 5390 is about 100 Å, transmissivity of thesecond sensing electrode 5390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the second sensing electrode 5390 may display an image in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 5390 mayperform a mirror function.

FIG. 143 is a plan view illustrating a first sensing electrode of FIG.125. FIG. 144 is a plan view magnifying ‘P’ portion of FIG. 143. FIG.145 is a plan view illustrating a second sensing electrode of FIG. 125.FIG. 146 is a plan view magnifying ‘Q’ portion of FIG. 145. FIG. 147 isa plan view illustrating the first sensing electrode of FIG. 143 and thesecond sensing electrode of FIG. 145. FIG. 148 is a plan view magnifying‘R’ portion of FIG. 147.

Referring to FIGS. 125 and 143 to 148, a first sensing electrode 5370and a second sensing electrode 5390 are illustrated.

The first sensing electrode 5370 may include plurality of first sensingpatterns 5371 having a rhombus shape and sequentially connected eachother in a first direction D1 and a plurality of first dummy patterns5373 having a rhombus shape and disposed between the first sensingpatterns 5371. The first dummy patterns 5373 are spaced apart from eachother. The first sensing electrode 5370 is disposed in the reflectionregion III. The first sensing electrode 5370 may be connected to asensing driving part through a first connecting line 5375. The firstconnecting line 5375 may include the same material as that of the firstsensing electrode 5370. The first connecting line 5375 may be disposedon the same layer as that on which the first sensing electrode 5370 isdisposed.

The second sensing electrode 5390 may include plurality of secondsensing patterns 5391 having a rhombus shape and sequentially connectedeach other in a second direction D2 and a plurality of second dummypatterns 5393 having a rhombus shape and disposed between the secondsensing patterns 5391. The second dummy patterns 5393 are spaced apartfrom each other. The second sensing electrode 5390 is disposed in thelight-emitting region II and the reflection region III. The secondsensing electrode 5390 may be connected to a sensing driving partthrough a second connecting line 5395. The second connecting line 5395may include the same material as that of the second sensing electrode5390. The second connecting line 5395 may be disposed on the same layeras that on which the second sensing electrode 5390 is disposed.

The first sensing electrode 5370 may include a material having apredetermined reflectivity. The second sensing electrode 5390 mayinclude a material having a predetermined reflectivity. The firstsensing electrode 5370 may partially overlap the second sensingelectrode 5390.

The second sensing electrode 5390 is disposed on the first thin filmencapsulation layer 5410. The second thin film encapsulation layer 5420is disposed on the second sensing electrode 5390. The first sensingelectrode 5370 is disposed on the second thin film encapsulation layer5420.

The first sensing electrode 5370 and second sensing electrode 5390 mayperform as a sensing electrode of a touch screen panel of mutualcapacitance type. In an exemplary embodiment, when an electric conductoris contacted, capacitance of an intersecting point of the first sensingelectrode 5370 and second sensing electrode 5390 around a touch positionis changed, for example. Thus, a touch panel sensor (not shown) maydecide a touch position based on a capacitance sensing signalcorresponding to the change of capacitance.

The first sensing electrode 5370 may have a different thickness from athickness of the second sensing electrode 5390. In an exemplaryembodiment, a thickness of the first sensing electrode 5370 may be about1000 Å, for example. When the thickness of the first sensing electrode5370 is about 1000 Å, transmissivity of the first sensing electrode 5370may be about 0%, and reflexibility of the first sensing electrode 5370may be greater than about 95%. In addition, a thickness of the secondsensing electrode 5390 may be about 100 Å. When the thickness of thesecond sensing electrode 5390 is about 100 Å, transmissivity of thesecond sensing electrode 5390 may be greater than about 50% and lessthan about 95%. When an organic light emitting display device emitslight, the light is emitted through the second electrode 390 in thelight-emitting region II, and when an organic light emitting displaydevice does not emits light, the second sensing electrode 5390 mayperform a mirror function.

According to the illustrated exemplary embodiment, an organic lightemitting display device includes a reflection member having a mirrorfunction and a touch function. Thus, additional process for forming anelectrode layer having a touch function may be omitted. This, amanufacturing cost may be decreased.

In addition, the organic light emitting display device includes a firstreflection member disposed in a reflection region and a second disposedin the light-emitting region and the reflection region. Thus, scatteredreflection occurred at an edge of the first reflection member may bedecreased.

In addition, the organic light emitting display device includes a thinfilm encapsulation layer. Thus, a flexible organic light emittingdisplay device having a mirror function and a touch function may bemanufactured.

The foregoing is illustrative of the invention and is not to beconstrued as limiting thereof. Although a few exemplary embodiments ofthe invention have been described, those skilled in the art will readilyappreciate that many modifications are possible in the illustratedexemplary embodiments without materially departing from the novelteachings and advantages of the invention. Accordingly, all suchmodifications are intended to be included within the scope of theinvention as defined in the claims. The invention is defined by thefollowing claims, with equivalents of the claims to be included therein.

What is claimed is:
 1. An organic light emitting display device comprising: a substrate comprising a light-emitting region and a reflection region; a first sensing electrode which senses a touch position, is disposed in the reflection region, and comprises a material having a first reflectivity; and a second sensing electrode which senses a touch position, is disposed in the light-emitting region and the reflection region, and comprises a material having a second reflectivity, and overlapping a portion of the first sensing electrode.
 2. The organic light emitting display device of claim 1, further comprising: an opposite substrate facing the substrate, wherein the first sensing electrode is disposed on a first surface of the opposite substrate, and the second sensing electrode is disposed on a second surface opposing the first surface of the opposite substrate, and wherein the first sensing electrode is disposed in the reflection region and an outside of the light-emitting region.
 3. The organic light emitting display device of claim 1, further comprising: an opposite substrate facing the substrate, wherein the first sensing electrode is disposed on the substrate, and the second sensing electrode is disposed on a first surface of the opposite substrate, and is disposed between the substrate and the opposite substrate.
 4. The organic light emitting display device of claim 1, further comprising: an opposite substrate facing the substrate, and an insulation layer disposed between the first sensing electrode and the second sensing electrode, and comprising an adhesive material, wherein the first sensing electrode is disposed on a first surface of the opposite substrate, and is disposed between the substrate and the opposite substrate, and the second sensing electrode is disposed on the first sensing electrode.
 5. The organic light emitting display device of claim 1, further comprising: an opposite substrate facing the substrate, and an insulation layer disposed between the first sensing electrode and the second sensing electrode, and comprising an adhesive material, wherein the second sensing electrode is disposed on a first surface of the opposite substrate, and is disposed between the substrate and the opposite substrate, and the first sensing electrode is disposed on the second sensing electrode.
 6. The organic light emitting display device of claim 1, further comprising: a thin film encapsulation layer disposed on the substrate, and an insulation layer disposed between the first sensing electrode and the second sensing electrode, and comprising an adhesive material, wherein the second sensing electrode is disposed on the thin film encapsulation layer, and the first sensing electrode is disposed on the second sensing electrode.
 7. The organic light emitting display device of claim 1, further comprising: a first thin film encapsulation layer disposed on the substrate, and a second thin film encapsulation layer disposed between the first sensing electrode and the second sensing electrode, wherein the second sensing electrode is disposed on the first thin film encapsulation layer, and the first sensing electrode is disposed on the second sensing electrode.
 8. The organic light emitting display device of claim 1, wherein the first sensing electrode comprises a plurality of first patterns extending in a first direction, and the second sensing electrode comprises a plurality of second patterns extending in a second direction crossing the first direction.
 9. The organic light emitting display device of claim 8, wherein the plurality of first patterns comprises: a plurality of first sensing patterns which sense a touch position; and a plurality of first dummy patterns disposed between the plurality of first sensing patterns, and wherein the plurality of second patterns comprises: a plurality of second sensing patterns which sense the touch position; and a plurality of second dummy patterns disposed between the plurality of second sensing patterns.
 10. The organic light emitting display device of claim 9, wherein the plurality of first sensing patterns have a mesh shape, and wherein a width of the plurality of second patterns in the second direction is the same as a width of the plurality of first patterns in the first direction.
 11. The organic light emitting display device of claim 1, wherein the first sensing electrode further comprises: a plurality of first sensing patterns having a rhombus shape and sequentially connected each other in a first direction; and a plurality of first dummy patterns having a rhombus shape, and disposed between the plurality of first sensing patterns, and spaced apart from each other, and wherein the second sensing electrode further comprises: a plurality of second sensing patterns having a rhombus shape and sequentially connected each other in a second direction crossing the first direction; and a plurality of second dummy patterns having a rhombus shape, and disposed between the plurality of second sensing patterns, and spaced apart from each other.
 12. A method of manufacturing an organic light emitting display device comprising a substrate comprising a light-emitting region and a reflection region, the method comprising: forming a first sensing electrode comprising a material having a first reflectivity on the reflection region; and forming a second sensing electrode comprising a material having a second reflectivity and overlapping a portion of the first sensing electrode on the light-emitting region and the reflection region.
 13. The method of claim 12, wherein the forming the first sensing electrode and the second sensing electrode comprises: forming the first sensing electrode on a first surface of an opposite substrate facing the substrate; and forming the second sensing electrode on a second surface opposing the first surface of the opposite substrate, wherein the first sensing electrode is disposed in the reflection region and an outside of the light-emitting region.
 14. The method of claim 12, wherein the forming the first sensing electrode and the second sensing electrode comprises: forming the first sensing electrode on the substrate; and forming the second sensing electrode on a first surface of an opposite substrate facing the substrate, wherein the second sensing electrode is disposed between the substrate and the opposite substrate.
 15. The method of claim 12, wherein the forming the first sensing electrode and the second sensing electrode comprises: forming the first sensing electrode on a first surface of an opposite substrate facing the substrate, the first sensing electrode being disposed between the substrate and the opposite substrate; forming an insulation layer comprising an adhesive material on the first sensing electrode; and forming the second sensing electrode on the insulation layer.
 16. The method of claim 12, wherein the forming the first sensing electrode and the second sensing electrode comprises: forming the second sensing electrode on a first surface of an opposite substrate facing the substrate, the second sensing electrode being disposed between the substrate and the opposite substrate; forming an insulation layer comprising an adhesive material on the second sensing electrode; and forming the first sensing electrode on the insulation layer.
 17. The method of claim 12, wherein the forming the first sensing electrode and the second sensing electrode comprises: forming a thin film encapsulation layer on the substrate; forming the second sensing electrode on the thin film encapsulation layer; forming an insulation layer on the second sensing electrode; and forming the first sensing electrode on the insulation layer.
 18. The method of claim 12, wherein the forming the first sensing electrode and the second sensing electrode comprises: forming a first thin film encapsulation layer on the substrate; forming the second sensing electrode on the first thin film encapsulation layer; forming a second thin film encapsulation layer comprising the same material as that of the first thin film encapsulation layer on the second sensing electrode; and forming the first sensing electrode on the second thin film encapsulation layer.
 19. The method of claim 12, wherein the first sensing electrode comprises a plurality of first patterns extending in a first direction, and the second sensing electrode comprises a plurality of second patterns extending in a second direction crossing the first direction.
 20. The method of claim 12, wherein the first sensing electrode comprises: a plurality of first sensing patterns having a rhombus shape and sequentially connected each other in a first direction; and a plurality of first dummy patterns having a rhombus shape, and disposed between the plurality of first sensing patterns, and spaced apart from each other, and wherein the second sensing electrode comprises: a plurality of second sensing patterns having a rhombus shape and sequentially connected each other in a second direction crossing the first direction; and a plurality of second dummy patterns having a rhombus shape, and disposed between the plurality of second sensing patterns, and spaced apart from each other. 